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NVMYS011N04CTWG

Name: onsemi NVMYS011N04CTWG
Brand: onsemi
SKU: 863-NVMYS011N04CTWG
Price: 23998 IDR
Availability: InStock

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Mouser No:

863-NVMYS011N04CTWG

Mfr. No:

NVMYS011N04CTWG

Mfr.:

onsemi

Description:

MOSFETs 40V 0.9Ohm 322A Single N-Channel

Datasheet:

NVMYS011N04CTWG Datasheet

ECAD Model:

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In Stock: 3.000

Stock:: 3.000 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp23.998	Rp23.998
	Rp15.082	Rp150.820
	Rp10.002	Rp1.000.200
	Rp7.813	Rp3.906.500
	Rp7.094	Rp7.094.000
Full Reel (Order in multiples of 3000)
	Rp6.534	Rp19.602.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	7.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	28 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	5 ns
Forward Transconductance - Min:	111 S
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	NVMYS011N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	75 mg

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Datasheet

NVMYS011N04CTWG Datasheet

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.