NVTFS4C02NTAG

onsemi
863-NVTFS4C02NTAG
NVTFS4C02NTAG

Mfr.:

Description:
MOSFETs T6 30V NCH U8FL

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 993

Stock:
993 Can Dispatch Immediately
Factory Lead Time:
38 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp41.515 Rp41.515
Rp29.779 Rp297.790
Rp23.473 Rp2.347.300
Rp19.444 Rp9.722.000
Rp18.218 Rp18.218.000
Full Reel (Order in multiples of 1500)
Rp18.218 Rp27.327.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
WDFN-8
N-Channel
1 Channel
30 V
162 A
2.25 mOhms
- 20 V, 20 V
2.2 V
20 nC
- 55 C
+ 175 C
3.2 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: onsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Product Type: MOSFETs
Series: NVTFS4C02N
Factory Pack Quantity: 1500
Subcategory: Transistors
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are small-footprint and compact MOSFETs with low RDS(on) and low capacitance. The low RDS(on) value helps to minimize conduction losses, and low capacitance minimizes driver losses. These single N-channel power MOSFETs are Pb-free and RoHS compliant and feature a -55°C to +175°C operating temperature range.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.