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RD3N03BATTL1

Name: ROHM Semiconductor RD3N03BATTL1
Brand: ROHM Semiconductor
SKU: 755-RD3N03BATTL1
Price: 39238 IDR
Availability: InStock

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Mouser No:

755-RD3N03BATTL1

Mfr. No:

RD3N03BATTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO252 P-CH 80V 30A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RD3N03BATTL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RD3N03BATTL1

In Stock: 1.983

Stock:: 1.983

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On Order:: 2.500
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp39.238	Rp39.238
	Rp25.224	Rp252.240
	Rp17.132	Rp1.713.200
	Rp13.681	Rp6.840.500
	Rp12.945	Rp12.945.000
Full Reel (Order in multiples of 2500)
	Rp12.314	Rp30.785.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	64 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	50 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	54 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	69 ns
Forward Transconductance - Min:	13.4 S
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	225 ns
Typical Turn-On Delay Time:	15 ns

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Datasheet

RD3N03BATTL1 Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Small Signal Dual Channel MOSFETs

ROHM Semiconductor Small Signal Dual Channel MOSFETs feature low on-resistance and fast switching. These MOSFETs are RoHS compliant and include Pb-free plating. The dual channel MOSFETs operate from -55°C to 150°C temperature range. These MOSFETs are used in motor drives and switching applications.