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RGPR20NL43HRTL

Name: ROHM Semiconductor RGPR20NL43HRTL
Brand: ROHM Semiconductor
SKU: 755-RGPR20NL43HRTL
Price: 67090 IDR
Availability: InStock

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Mouser No:

755-RGPR20NL43HRTL

Mfr. No:

RGPR20NL43HRTL

Mfr.:

ROHM Semiconductor

Description:

IGBTs Transistor, IGBT, 430V +/- 30V, 20A

Datasheet:

RGPR20NL43HRTL Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RGPR20NL43HRTL

In Stock: 1.960

Stock:: 1.960 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp67.090	Rp67.090
	Rp43.968	Rp439.680
	Rp30.830	Rp3.083.000
	Rp27.502	Rp13.751.000
Full Reel (Order in multiples of 1000)
	Rp25.575	Rp25.575.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-263-3
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	460 V
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	10 V
Continuous Collector Current at 25 C:	20 A
Pd - Power Dissipation:	107 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Gate-Emitter Leakage Current:	1.2 mA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Part # Aliases:	RGPR20NL43HR

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Datasheet

RGPR20NL43HRTL Datasheet (PDF)

Specification Sheets

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive Ignition IGBTs

ROHM Semiconductor Automotive Ignition IGBTs with low collector-emitter saturation voltage are suitable for the ignition coil and solenoid driver circuits. The IGBT transistors feature high self-clamped inductive switching energy, built-in gate-emitter protection diode, and built-in gate-emitter resistance. These IGBT transistors operate at -40ºC to 175ºC and -55ºC to 175ºC storage temperature. The devices are housed in 3-pin TO-252 and TO263S packages and are a highly reliable product for automotive.