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RGS30TSX2GC11

Name: ROHM Semiconductor RGS30TSX2GC11
Brand: ROHM Semiconductor
SKU: 755-RGS30TSX2GC11
Price: 128925.12 IDR
Availability: InStock

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Mouser No:

755-RGS30TSX2GC11

Mfr. No:

RGS30TSX2GC11

Mfr.:

ROHM Semiconductor

Description:

IGBTs 10s Short-Circuit Tolerance, 1200V 15A, Field Stop Trench IGBT

Datasheet:

RGS30TSX2GC11 Datasheet (PDF)

ECAD Model:

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In Stock: 886

Stock:: 886 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 886 will be subject to minimum order requirements.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp128.925,12	Rp128.925,12
	Rp88.986,36	Rp889.863,60
	Rp63.937,05	Rp6.393.705,00
	Rp63.061,20	Rp28.377.540,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247N-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	30 V
Continuous Collector Current at 25 C:	30 A
Pd - Power Dissipation:	267 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Gate-Emitter Leakage Current:	500 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Part # Aliases:	RGS30TSX2

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Datasheet

RGS30TSX2GC11 Datasheet (PDF)

PCN

Product Change Notification 2024-10-15 (PDF)

Specification Sheets

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USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

RGSx0TSX2x Field Stop Trench IGBTs

ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (V_CE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.