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RQ3E120GNTB

Name: ROHM Semiconductor RQ3E120GNTB
Brand: ROHM Semiconductor
SKU: 755-RQ3E120GNTB
Price: 13663.26 IDR
Availability: InStock

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Mouser No:

755-RQ3E120GNTB

Mfr. No:

RQ3E120GNTB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs 4.5V Drive Nch MOSFET

Datasheet:

RQ3E120GNTB Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RQ3E120GNTB

In Stock: 29.681

Stock:: 29.681 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000,00)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp13.663,26	Rp13.663,26
	Rp8.513,26	Rp85.132,60
	Rp5.500,34	Rp550.034,00
	Rp4.204,08	Rp2.102.040,00
	Rp3.783,67	Rp3.783.670,00
Full Reel (Order in multiples of 3000)
	Rp3.223,13	Rp9.669.390,00
	Rp2.960,37	Rp17.762.220,00
	Rp2.855,27	Rp25.697.430,00

† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSMT-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	27 A
Rds On - Drain-Source Resistance:	8.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	3.4 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	4.5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25.5 ns
Typical Turn-On Delay Time:	9.6 ns
Part # Aliases:	RQ3E120GN
Unit Weight:	195,815 mg

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Datasheet

RQ3E120GNTB Datasheet

Models

ThermalLink

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Specification Sheets

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Technical Resources

Test/Quality Data

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Medium Power MOSFETs

ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. These MOSFETs feature a broad lineup with compact, high-power, and complex types to meet various needs. ROHM Medium Power MOSFETs come in high-power small mold packages, and typical applications are for DC/DC converters and load switches.