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SCS205KGC17

Name: ROHM Semiconductor SCS205KGC17
Brand: ROHM Semiconductor
SKU: 755-SCS205KGC17
Price: 108430.23 IDR
Availability: InStock

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Mouser No:

755-SCS205KGC17

Mfr. No:

SCS205KGC17

Mfr.:

ROHM Semiconductor

Description:

SiC Schottky Diodes RECT 1.2KV 5A RDL SIC SKY

Datasheet:

SCS205KGC17 Datasheet (PDF)

ECAD Model:

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In Stock: 1.463

Stock:: 1.463

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On Order:: 4.000
Factory Lead Time:: 21

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp108.430,23	Rp108.430,23
	Rp52.901,34	Rp529.013,40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220ACG-2
Configuration:	Single
If - Forward Current:	5 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.6 V
Ifsm - Forward Surge Current:	23 A
Ir - Reverse Current:	100 uA
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	88 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV
Part # Aliases:	SCS205KG

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Datasheet

SCS205KGC17 Datasheet (PDF)

Specification Sheets

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CNHTS:: 8541100000
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (Q_C), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.