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SI8800EDB-T2-E1

Name: Vishay SI8800EDB-T2-E1
Brand: Vishay Semiconductors
SKU: 781-SI8800EDB-T2-E1
Price: 12612 IDR
Availability: InStock

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Mouser No:

781-SI8800EDB-T2-E1

Mfr. No:

SI8800EDB-T2-E1

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

Datasheet:

SI8800EDB-T2-E1 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SI8800EDB-T2-E1

In Stock: 19.980

Stock:: 19.980 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp12.612	Rp12.612
	Rp7.813	Rp78.130
	Rp5.027	Rp502.700
	Rp3.836	Rp1.918.000
	Rp3.433	Rp3.433.000
Full Reel (Order in multiples of 3000)
	Rp2.925	Rp8.775.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	MicroFoot-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.8 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Qg - Gate Charge:	8.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 mW
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Product Type:	MOSFETs
Series:	SI8
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	279,143 mg

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Datasheet

SI8800EDB-T2-E1 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541210000
TARIC:: 8541290000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R_DS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.