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SI8819EDB-T2-E1

Name: Vishay SI8819EDB-T2-E1
Brand: Vishay Semiconductors
SKU: 78-SI8819EDB-T2-E1
Price: 14189 IDR
Availability: InStock

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Mouser No:

78-SI8819EDB-T2-E1

Mfr. No:

SI8819EDB-T2-E1

Mfr.:

Vishay Semiconductors

Description:

MOSFETs -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

Datasheet:

SI8819EDB-T2-E1 Datasheet

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In Stock: 231

Stock:: 231 Can Dispatch Immediately

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Factory Lead Time:: 29 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp14.189	Rp14.189
	Rp8.776	Rp87.760
	Rp5.640	Rp564.000
	Rp4.677	Rp2.338.500
	Rp3.731	Rp3.731.000
Full Reel (Order in multiples of 3000)
	Rp2.733	Rp8.199.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	MicroFoot-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	2.9 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	45,104 mg

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Datasheet

SI8819EDB-T2-E1 Datasheet

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541210000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R_DS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.