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SIA421DJ-T1-GE3

Name: Vishay SIA421DJ-T1-GE3
Brand: Vishay Semiconductors
SKU: 781-SIA421DJ-T1-GE3
Price: 26801 IDR
Availability: InStock

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Mouser No:

781-SIA421DJ-T1-GE3

Mfr. No:

SIA421DJ-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs -30V Vds 20V Vgs PowerPAK SC-70

Datasheet:

SIA421DJ-T1-GE3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SIA421DJ-T1-GE3

In Stock: 5.890

Stock:: 5.890 Can Dispatch Immediately

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Factory Lead Time:: 5 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp26.801	Rp26.801
	Rp16.939	Rp169.390
	Rp11.298	Rp1.129.800
	Rp8.864	Rp4.432.000
	Rp8.075	Rp8.075.000
Full Reel (Order in multiples of 3000)
	Rp7.375	Rp22.125.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	19 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	19 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10 ns
Forward Transconductance - Min:	15 S
Product Type:	MOSFETs
Rise Time:	12 ns
Series:	SIA
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	SIA421DJ-GE3
Unit Weight:	41 mg

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Datasheet

SIA421DJ-T1-GE3 Datasheet

Models

PCN

Product Change Notification (PDF)

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

PowerPAK SC-70 MOSFETs

Vishay Semiconductors PowerPAK® SC-70 MOSFET combines the tiny footprint of the SC-70 package with on-resistance comparable to the larger TSOP-6, resulting in very low power consumption in a package 50% smaller than the TSOP-6 and 27% thinner. The Vishay Semiconductor PowerPAK SC-70 MOSFET comes in a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The PowerPAK SC-70 MOSFET features voltage ranges between 8V and 30V with extremely low on-resistance values down to 0.011Ω at 4.5V.