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SICW025N120H-BP

Name: Micro Commercial Components (MCC) SICW025N120H-BP
Brand: Micro Commercial Components (MCC)
SKU: 833-SICW025N120H-BP
Price: 298489.68 IDR
Availability: InStock

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Mouser No:

833-SICW025N120H-BP

Mfr. No:

SICW025N120H-BP

Mfr.:

Micro Commercial Components (MCC)

Description:

SiC MOSFETs SiC MOSFET,TO-247AB

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SICW025N120H-BP Datasheet (PDF)

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Learn more about Micro Commercial Components (MCC) SICW025N120H-BP

In Stock: 357

Stock:: 357 Can Dispatch Immediately

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Factory Lead Time:: 36 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp298.489,68	Rp298.489,68
	Rp211.780,53	Rp2.117.805,30
	Rp184.278,84	Rp18.427.884,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Micro Commercial Components (MCC)
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	86 A
Rds On - Drain-Source Resistance:	45 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	305 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Brand:	Micro Commercial Components (MCC)
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12 ns
Forward Transconductance - Min:	18.6 S
Packaging:	Bulk
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	55 ns
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	8 ns
Typical Turn-On Delay Time:	31 ns

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Datasheet

SICW025N120H-BP Datasheet (PDF)

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SICW0x 1200V SiC N-Channel MOSFETs

Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs amplify performance in versatile TO-247-4, TO-247-4L and TO-247AB packages. These MOSFETs feature high switching speed with low gate charge, design flexibility and reliability. The SICW0x 1200V SiC MOSFETs include a 21mΩ to 120mΩ typical wide on-resistance range and reliable performance. These SiC MOSFETs deliver superior thermal properties and a fast intrinsic diode to ensure smooth, efficient operation in challenging conditions. The SICW0x SiC MOSFETs are available in 3-pin and 4-pin (Kelvin source) configurations. Typical applications include motor drives, welding equipment, power supplies, renewable energy systems, charging infrastructure, cloud systems and Uninterruptible Power Supply (UPS).