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SIJH5100E-T1-GE3

Name: Vishay SIJH5100E-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIJH5100E-T1-GE3
Price: 120342 IDR
Availability: InStock

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Mouser No:

78-SIJH5100E-T1-GE3

Mfr. No:

SIJH5100E-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PWRPK 100V N-CH MOSFET

Datasheet:

SIJH5100E-T1-GE3 Datasheet

ECAD Model:

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In Stock: 1.857

Stock:: 1.857 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp120.342	Rp120.342
	Rp81.279	Rp812.790
	Rp60.083	Rp6.008.300
	Rp56.930	Rp56.930.000
Full Reel (Order in multiples of 2000)
	Rp56.930	Rp113.860.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	277 A
Rds On - Drain-Source Resistance:	1.89 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	333 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	21 ns
Forward Transconductance - Min:	120 S
Product Type:	MOSFETs
Rise Time:	17 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	41 ns
Typical Turn-On Delay Time:	24 ns

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Datasheet

SIJH5100E-T1-GE3 Datasheet

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs

Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low R_DS(on). These power MOSFETs offer 30V V_DS and very low R_DS x Q_g Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A I_D and 19.9nC Q_g. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A I_D and 21nC Q_g. This 100% R_g and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.