+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SQJ116EP-T1_GE3

Name: Vishay SQJ116EP-T1_GE3
Brand: Vishay
SKU: 78-SQJ116EP-T1_GE3
Price: 27852 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SQJ116EP-T1_GE3

Mfr. No:

SQJ116EP-T1_GE3

Mfr.:

Vishay

Description:

MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SQJ116EP-T1_GE3 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 3.160

Stock:: 3.160 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 5 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp27.852	Rp27.852
	Rp17.289	Rp172.890
	Rp11.263	Rp1.126.300
	Rp8.671	Rp4.335.500
	Rp7.848	Rp7.848.000
Full Reel (Order in multiples of 3000)
	Rp6.289	Rp18.867.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	37 A
Rds On - Drain-Source Resistance:	64 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	84 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	88 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4 ns
Forward Transconductance - Min:	44 S
Product Type:	MOSFETs
Rise Time:	3 ns
Series:	SQJ
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1-N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	11 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SQJ116EP-T1_GE3 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SQJ Automotive MOSFETs

Vishay / Siliconix SQJ Automotive MOSFETs are TrenchFET^®Gen IV N-Channel 40V_DS power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% R_g and Unclamped Inductive Switching (UIS) tested with less-than 1 Q_gd/Q_gs ratio that optimizes the switching characteristics. The Vishay / Siliconix SQJ Automotive MOSFETs offer very low R_DS(on) and operate within the -55°C to 175°C temperature range. These automotive-grade MOSFETs are available in a PowerPAK^® SO-8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives and actuators, and battery management.