SQJ409EP-T2_GE3

Vishay / Siliconix
78-SQJ409EP-T2_GE3
SQJ409EP-T2_GE3

Mfr.:

Description:
MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET

ECAD Model:
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In Stock: 37.748

Stock:
37.748 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp35.735 Rp35.735
Rp22.947 Rp229.470
Rp15.415 Rp1.541.500
Rp12.244 Rp6.122.000
Rp11.561 Rp11.561.000
Full Reel (Order in multiples of 3000)
Rp11.369 Rp34.107.000
Rp10.790 Rp64.740.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
P-Channel
1 Channel
40 V
60 A
7 mOhms
- 20 V, 20 V
2 V
170 nC
- 55 C
+ 175 C
68 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay / Siliconix
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: MOSFETs
Series: SQJ
Factory Pack Quantity: 3000
Subcategory: Transistors
Products found:
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Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

SQJ Automotive MOSFETs

Vishay / Siliconix SQJ Automotive MOSFETs are TrenchFET® Gen IV N-Channel 40VDS power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested with less-than 1 Qgd/Qgs ratio that optimizes the switching characteristics. The Vishay / Siliconix SQJ Automotive MOSFETs offer very low RDS(on) and operate within the -55°C to 175°C temperature range. These automotive-grade MOSFETs are available in a PowerPAK® SO-8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives and actuators, and battery management.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.