SQUN702E-T1_GE3

Vishay Semiconductors
78-SQUN702E-T1_GE3
SQUN702E-T1_GE3

Mfr.:

Description:
MOSFETs 40-V N- & P-CH COMMON DRAIN + 200-V

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp72.520,38 Rp72.520,38
Rp53.251,68 Rp532.516,80
Rp37.836,72 Rp3.783.672,00
Rp35.034,00 Rp17.517.000,00
Full Reel (Order in multiples of 2000)
Rp32.581,62 Rp65.163.240,00
† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
Triple die
N-Channel, P-Channel
3 Channel
40 V, 200 V
20 A, 30 A
9.2 mOhms, 30 mOhms, 60 mOhms
- 25 V, 25 V
1.5 V, 2.5 V
14 nC, 23 nC, 30.2 nC
- 55 C
+ 175 C
48 W, 60 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Triple
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Fall Time: 2 ns, 10 ns, 19 ns
Forward Transconductance - Min: 16 S, 19 S, 65 S
Product Type: MOSFETs
Rise Time: 3 ns, 9 ns, 12 ns
Series: SQUN
Factory Pack Quantity: 2000
Subcategory: Transistors
Transistor Type: 2 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time: 15 ns, 22 ns, 43 ns
Typical Turn-On Delay Time: 7 ns, 8 ns, 10 ns
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Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 

N- & P-Channel Pair Thermally Enhanced MOSFETs

Vishay N- and P-Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one package. These Vishay N- and P-Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 

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