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STF80N240K6

Name: STMicroelectronics STF80N240K6
Brand: STMicroelectronics
SKU: 511-STF80N240K6
Price: 104051 IDR
Availability: InStock

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Mouser No:

511-STF80N240K6

Mfr. No:

STF80N240K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STF80N240K6 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STF80N240K6

In Stock: 1.017

Stock:: 1.017

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On Order:: 1.000
Factory Lead Time:: 15

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp104.051	Rp104.051
	Rp78.651	Rp786.510
	Rp63.412	Rp6.341.200
	Rp56.405	Rp28.202.500
	Rp49.923	Rp49.923.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	16 A
Rds On - Drain-Source Resistance:	220 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	25.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	27 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12 ns
Product Type:	MOSFETs
Rise Time:	5.3 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Typical Turn-Off Delay Time:	47.8 ns
Typical Turn-On Delay Time:	16 ns

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Datasheet

STF80N240K6 Datasheet (PDF)

PCN

Product Change Notification 2025-5-3 (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.