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STL33N60M2

Name: STMicroelectronics STL33N60M2
Brand: STMicroelectronics
SKU: 511-STL33N60M2
Price: 87935 IDR
Availability: InStock

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Mouser No:

511-STL33N60M2

Mfr. No:

STL33N60M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8

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Datasheet:

STL33N60M2 Datasheet (PDF)

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In Stock: 1.617

Stock:: 1.617 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1617 will be subject to minimum order requirements.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp87.935	Rp87.935
	Rp83.206	Rp832.060
	Rp65.163	Rp6.516.300
	Rp57.981	Rp28.990.500
	Rp49.573	Rp49.573.000
Full Reel (Order in multiples of 3000)
	Rp34.158	Rp102.474.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-8x8-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	21.5 A
Rds On - Drain-Source Resistance:	135 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	47 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Series:	STL33N60M2
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	180 mg

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Datasheet

STL33N60M2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R_DS(on)*Q_g in the industry.