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STP18NM80

Name: STMicroelectronics STP18NM80
Brand: STMicroelectronics
SKU: 511-STP18NM80
Price: 142063 IDR
Availability: InStock

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Mouser No:

511-STP18NM80

Mfr. No:

STP18NM80

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V MDMesh

Complete Your Design

Datasheet:

STP18NM80 Datasheet (PDF)

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In Stock: 921

Stock:: 921 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp142.063	Rp142.063
	Rp77.600	Rp776.000
	Rp71.294	Rp7.129.400
	Rp70.068	Rp35.034.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	295 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	50 ns
Product Type:	MOSFETs
Rise Time:	28 ns
Series:	STP18NM80
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	96 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	2 g

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Datasheet

STP18NM80 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R_DS(on)*Q_g in the industry.