+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

STWA60N035M9

Name: STMicroelectronics STWA60N035M9
Brand: STMicroelectronics
SKU: 511-STWA60N035M9
Price: 143990 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STWA60N035M9

Mfr. No:

STWA60N035M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STWA60N035M9 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STWA60N035M9

In Stock: 288

Stock:: 288 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 50

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp143.990	Rp143.990
	Rp104.752	Rp1.047.520

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	62 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	112 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	321 mW
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4.2 ns
Product Type:	MOSFETs
Rise Time:	11 nc
Series:	MDmesh M9
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	81 ns
Typical Turn-On Delay Time:	28 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STWA60N035M9 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.