TK080U60Z1,RQ

Toshiba
757-TK080U60Z1RQ
TK080U60Z1,RQ

Mfr.:

Description:
MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Toshiba TK080U60Z1,RQ

In Stock: 1.998

Stock:
1.998
Can Dispatch Immediately
On Order:
2.000
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp88.636,02 Rp88.636,02
Rp59.032,29 Rp590.322,90
Rp42.040,80 Rp4.204.080,00
Rp39.938,76 Rp19.969.380,00
Rp37.836,72 Rp37.836.720,00
Full Reel (Order in multiples of 2000)
Rp37.311,21 Rp74.622.420,00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
TOLL-9
N-Channel
1 Channel
600 V
30 A
80 mOhms
30 V
4 V
43 nC
+ 150 C
211 W
Enhancement
Reel
Cut Tape
Brand: Toshiba
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 20 ns
Factory Pack Quantity: 2000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 93 ns
Typical Turn-On Delay Time: 50 ns
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [RDS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.

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