It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

UF3C065080K4S

Name: onsemi UF3C065080K4S
Brand: onsemi
SKU: 431-UF3C065080K4S
Price: 202846.86 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

431-UF3C065080K4S

Mfr. No:

UF3C065080K4S

Mfr.:

onsemi

Description:

SiC MOSFETs 650V/80MOSICFETG3TO247

Datasheet:

UF3C065080K4S Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi UF3C065080K4S

In Stock: 583

Stock:: 583 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-,--

Ext. Price:

Rp-,--

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp202.846,86	Rp202.846,86
	Rp121.567,98	Rp1.215.679,80
	Rp111.758,46	Rp11.175.846,00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	8 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	20 ns
Series:	UF3C
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	21 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

UF3C065080K4S Datasheet

Models

SPICE Model/UF3C065080K4S (Text)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.