UF3C120080B7S

onsemi
431-UF3C120080B7S
UF3C120080B7S

Mfr.:

Description:
SiC MOSFETs 1200V/80MOSICFETG3TO263-7

Datasheet:
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In Stock: 722

Stock:
722 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp314.780 Rp314.780
Rp224.042 Rp2.240.420
Rp211.255 Rp21.125.500
Rp209.503 Rp104.751.500
Full Reel (Order in multiples of 800)
Rp197.241 Rp157.792.800

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
28.8 A
85 mOhms
- 25 V, + 25 V
6 V
23 nC
- 55 C
+ 175 C
190 W
Enhancement
SiC FET
Brand: onsemi
Compliance: Done
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 9 ns, 8 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Rise Time: 7 ns, 6 ns
Series: UF3C
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 31 ns, 33 ns
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Attributes selected: 0

Datasheet

PCN

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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

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