UF3SC065007K4S

onsemi
431-UF3SC065007K4S
UF3SC065007K4S

Mfr.:

Description:
SiC MOSFETs 650V/7MOSICFETG3TO247-4

Datasheet:
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In Stock: 245

Stock:
245 Can Dispatch Immediately
Factory Lead Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 245 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp1.281.543,72 Rp1.281.543,72
Rp994.089,75 Rp9.940.897,50

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
120 A
9 mOhms
- 12 V, + 12 V
6 V
214 nC
- 55 C
+ 175 C
789 W
Enhancement
AEC-Q101
SiC FET
Brand: onsemi
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 14 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 46 ns
Series: UF3SC
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 72 ns
Typical Turn-On Delay Time: 36 ns
Unit Weight: 6 g
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Datasheet

Models

PCN

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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low RDS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.

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