VS-4C06ET07S2L-M3

Vishay Semiconductors
78-VS-4C06ET07S2L-M3
VS-4C06ET07S2L-M3

Mfr.:

Description:
SiC Schottky Diodes SiCG4D2PAK2L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Vishay Semiconductors VS-4C06ET07S2L-M3

In Stock: 765

Stock:
765 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp55.528,89 Rp55.528,89
Rp35.559,51 Rp355.595,10
Rp24.173,46 Rp2.417.346,00
Rp20.144,55 Rp10.072.275,00
Full Reel (Order in multiples of 800)
Rp18.568,02 Rp14.854.416,00
Rp17.867,34 Rp42.881.616,00
Rp17.429,42 Rp83.661.216,00

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
TO-263AB-2
Single
6 A
650 V
1.3 V
39 A
35 uA
- 55 C
+ 175 C
4C06ET07S2L-M3
Reel
Cut Tape
Brand: Vishay Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Pd - Power Dissipation: 59 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 800
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
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Attributes selected: 0

Datasheet

CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

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