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VS-4C20ET07T-M3

Name: Vishay VS-4C20ET07T-M3
Brand: Vishay Semiconductors
SKU: 78-VS-4C20ET07T-M3
Price: 93366 IDR
Availability: InStock

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Mouser No:

78-VS-4C20ET07T-M3

Mfr. No:

VS-4C20ET07T-M3

Mfr.:

Vishay Semiconductors

Description:

SiC Schottky Diodes SicG4TO-2202L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

VS-4C20ET07T-M3 Datasheet (PDF)

ECAD Model:

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Learn more about Vishay Semiconductors VS-4C20ET07T-M3

In Stock: 980

Stock:: 980 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp93.366	Rp93.366
	Rp60.959	Rp609.590
	Rp47.646	Rp4.764.600
	Rp41.515	Rp20.757.500
	Rp35.209	Rp35.209.000
	Rp34.684	Rp69.368.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220AC-2
Configuration:	Single
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.33 V
Ifsm - Forward Surge Current:	125 A
Ir - Reverse Current:	110 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	VS-4C20ET07T-M3
Packaging:	Tube
Brand:	Vishay Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	125 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V

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Datasheet

VS-4C20ET07T-M3 Datasheet (PDF)

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CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.