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VS-4C30E3P07L-M3

Name: Vishay VS-4C30E3P07L-M3
Brand: Vishay Semiconductors
SKU: 78-VS-4C30E3P07L-M3
Price: 127524 IDR
Availability: InStock

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Mouser No:

78-VS-4C30E3P07L-M3

Mfr. No:

VS-4C30E3P07L-M3

Mfr.:

Vishay Semiconductors

Description:

SiC Schottky Diodes SicG4TO-2473L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

VS-4C30E3P07L-M3 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Vishay Semiconductors VS-4C30E3P07L-M3

In Stock: 500

Stock:: 500 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp127.524	Rp127.524
	Rp84.782	Rp847.820
	Rp69.893	Rp6.989.300
	Rp59.207	Rp29.603.500
	Rp53.952	Rp53.952.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247AD-3
Configuration:	Single
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1,33 V
Ifsm - Forward Surge Current:	180 A
Ir - Reverse Current:	125 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	VS-4C30E3P07L-M3
Packaging:	Tube
Brand:	Vishay Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	273 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	500
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V

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Datasheet

VS-4C30E3P07L-M3 Datasheet (PDF)

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Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.