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GCMX080C120S1-E1

Name: SemiQ GCMX080C120S1-E1
Brand: SemiQ
SKU: 148-GCMX080C120S1-E1
Price: 374163.12 IDR
Availability: OutOfStock

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Mouser No:

148-GCMX080C120S1-E1

Mfr. No:

GCMX080C120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMX080C120S1-E1 Datasheet (PDF)

ECAD Model:

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Learn more about SemiQ GCMX080C120S1-E1

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Factory Lead Time:: 8 Weeks Estimated factory production time.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp374.163,12	Rp374.163,12
	Rp269.061,12	Rp2.690.611,20
	Rp246.113,85	Rp29.533.662,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	28 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	118 W
Series:	GCMX
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	26 ns
Height:	12.19 mm
Length:	38.1 mm
Product:	Power Modules
Product Type:	MOSFET Modules
Rise Time:	4 ns
Factory Pack Quantity:	30
Subcategory:	Discrete and Power Modules
Type:	MOSFET Power Module
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	10 ns
Vf - Forward Voltage:	3.7 V
Width:	25.3 mm

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Datasheet

GCMX080C120S1-E1 Datasheet (PDF)

GEN3 1200V SiC MOSFET Power Modules

SemiQ GEN3 1200V SiC MOSFET Power Modules with an isolated backplate are based on third-generation SiC technology and tested at over 1400V. These come in two versions, the GCMX series and the GCMS series. Both of these highly rugged and easy-mount devices provide smaller die sizes, faster switching speeds, and reduced losses. The lineup includes an overall drain-source on-resistance [R_DS(on)] range from 8.4mΩ to 80mΩ with a switching time as low as 67ns. The COPACK MOSFETs (GCMS) with a Schottky barrier diode offer exceptional switching losses at a high junction temperature due to the low turn-on switching losses. The SemiQ GEN3 1200V SiC MOSFET Power Modules feature a continuous operational and storage temperature of -55°C to +175°C. Target applications include solar inverters, energy storage systems (ESS), battery charging, and server power supplies.