LMG2100R026VBNR

Texas Instruments
595-LMG2100R026VBNR
LMG2100R026VBNR

Mfr.:

Description:
Gate Drivers 100V 2.6m? half-brid ge gallium nitride

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Texas Instruments LMG2100R026VBNR

In Stock: 7.680

Stock:
7.680 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp222.291 Rp222.291
Rp177.798 Rp1.777.980
Rp172.367 Rp4.309.175
Rp149.595 Rp14.959.500
Rp142.939 Rp35.734.750
Rp130.326 Rp65.163.000
Rp129.976 Rp129.976.000
Full Reel (Order in multiples of 2500)
Rp111.058 Rp277.645.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Gate Drivers
Half-Bridge
SMD/SMT
VQFN-16
1 Driver
1 Output
8 A
4.75 V
5.25 V
- 40 C
+ 125 C
LMG2100R026
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: PH
Country of Diffusion: US
Country of Origin: PH
Features: Low Power Consumption
Input Voltage - Max: 5.25 V
Input Voltage - Min: 4.75 V
Moisture Sensitive: Yes
Output Voltage: 12 V
Product Type: Gate Drivers
Propagation Delay - Max: 55 ns
Rds On - Drain-Source Resistance: 3.5 mOhms
Shutdown: No Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
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Attributes selected: 0

Datasheet

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CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG2100R026 GaN Half-Bridge Power Stage

Texas Instruments LMG2100R026 GaN Half-Bridge Power Stage integrates gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The 93V continuous, 100V pulsed, 53A half-bridge power stage includes two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. The driver and the two GaN FETs are mounted on a fully bond-wire-free package platform with minimized package parasitic elements.

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