BM3G005MUV-LBE2

ROHM Semiconductor
755-BM3G005MUV-LBE2
BM3G005MUV-LBE2

Mfr.:

Description:
GaN FETs PMIC Power Switch/Driver, 650V, 5m, Low Side Nch

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about ROHM Semiconductor BM3G005MUV-LBE2

In Stock: 995

Stock:
995 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp282.724,38 Rp282.724,38
Rp218.787,33 Rp2.187.873,30
Rp199.168,29 Rp19.916.829,00
Full Reel (Order in multiples of 1000)
Rp180.249,93 Rp180.249.930,00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: GaN FETs
RoHS:  
SMD/SMT
VQFN-46
1 Channel
650 V
68.8 A
70 mOhms
- 40 C
+ 105 C
Enhancement
Nano Cap; EcoGaN
Brand: ROHM Semiconductor
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: JP
Fall Time: 2.7 ns
Maximum Operating Frequency: 2 MHz
Packaging: Reel
Packaging: Cut Tape
Product: GaN HEMT Power Stage
Product Type: GaN FETs
Rise Time: 5 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: Si
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 14 ns
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Attributes selected: 0

Datasheet

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USHTS:
8542390070
ECCN:
EAR99

Nano Cap™ 650V GaN HEMT Power Stage ICs

ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs are designed for demanding electronics systems. These ICs boast a blend of high power density and efficiency. The devices integrate a 650V enhancement GaN HEMT and a silicon driver. ROHM Semiconductor Nano Cap 650V GaN HEMT Power Stage ICs are ideal for applications that include industrial equipment, power supplies, bridge topology, and adapters.

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