MMBT3904T RSG

Taiwan Semiconductor
821-MMBT3904TRSG
MMBT3904T RSG

Mfr.:

Description:
Bipolar Transistors - BJT 60V, 0.2A, NPN Bipolar Transistor

Datasheet:
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Learn more about Taiwan Semiconductor MMBT3904T RSG

In Stock: 5.708

Stock:
5.708 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp3.679 Rp3.679
Rp2.207 Rp22.070
Rp1.384 Rp138.400
Rp1.016 Rp508.000
Rp893 Rp893.000
Full Reel (Order in multiples of 3000)
Rp718 Rp2.154.000
Rp648 Rp3.888.000
Rp526 Rp4.734.000
Rp508 Rp12.192.000

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOT-523-3
NPN
Single
200 mA
40 V
60 V
6 V
300 mV
150 mW
- 55 C
+ 150 C
Reel
Cut Tape
Brand: Taiwan Semiconductor
Continuous Collector Current: 200 mA
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
DC Collector/Base Gain hFE Min: 30
DC Current Gain hFE Max: 300
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

Datasheet

Models

SPICE Models

CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

MMBT3904T NPN Bipolar Transistor

Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor is an epitaxial planar type transistor with improved electrical conductivity. This transistor is designed with 60V of collector-to-base voltage (VCBO), 40V of collector-to-emitter voltage (VCEO), and 6V of emitter-to-base voltage (VEBO). The MMBT3904T NPN transistor features a collector current of 200mA and a power dissipation (PD) of 150mW. This transistor is halogen-free according to IEC 61249-2-21 standards and RoHS compliant. Some of the applications include consumer electronics, low-frequency amplifiers, and drivers.

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