+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IPTC007N06NM5ATMA1

Name: Infineon IPTC007N06NM5ATMA1
Brand: Infineon Technologies
SKU: 726-TC007N06NM5ATMA1
Price: 126648 IDR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

726-TC007N06NM5ATMA1

Mfr. No:

IPTC007N06NM5ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Datasheet:

IPTC007N06NM5ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IPTC007N06NM5ATMA1

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp126.648	Rp126.648
	Rp85.658	Rp856.580
	Rp63.587	Rp6.358.700
	Rp61.660	Rp30.830.000
	Rp57.631	Rp57.631.000
Full Reel (Order in multiples of 1800)
	Rp57.631	Rp103.735.800

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HDSOP-16
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	454 A
Rds On - Drain-Source Resistance:	750 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	209 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	22 ns
Forward Transconductance - Min:	330 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	IPTC007N06
Factory Pack Quantity:	1800
Subcategory:	Transistors
Typical Turn-Off Delay Time:	76 ns
Typical Turn-On Delay Time:	38 ns
Part # Aliases:	IPTC007N06NM5 SP005753483

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IPTC007N06NM5ATMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
Learn More