ISSI DRAM

Results: 1.824
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Type Memory Size Data Bus Width Maximum Clock Frequency Package/Case Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Series Packaging
ISSI DRAM RLDRAM2 Memory, 288Mbit, x36, Common I/O, 400MHz, RoHS, wBGA Non-Stocked
Min.: 104
Mult.: 104

RLDRAM2 288 Mbit 36 bit 400 MHz WFCBGA-144 8 M x 36 1.7 V 2.63 V 0 C + 70 C IS49NLC36800
ISSI DRAM RLDRAM2 Memory, 288Mbit, x9, Common I/O, 400MHz, RoHS, Ind. Temp, wBGA Non-Stocked
Min.: 104
Mult.: 104

RLDRAM2 288 Mbit 9 bit 400 MHz WBGA-144 32 M x 9 1.7 V 2.63 V - 40 C + 85 C IS49NLC93200 Bulk
ISSI DRAM RLDRAM2 Memory, 288Mbit, x9, Common I/O, 300MHz, RoHS, Ind. Temp, wBGA Non-Stocked
Min.: 104
Mult.: 104

RLDRAM2 288 Mbit 9 bit 300 MHz WBGA-144 32 M x 9 1.7 V 2.63 V - 40 C + 85 C IS49NLC93200 Bulk
ISSI DRAM RLDRAM2 Memory, 576Mbit, x9, Common I/O, 400MHz, tRC=20ns, RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 104
Mult.: 104

RLDRAM2 576 Mbit 9 bit 400 MHz WBGA-144 64 M x 9 1.7 V 2.63 V 0 C + 95 C IS49NLC96400A Bulk
ISSI DRAM RLDRAM2 Memory, 576Mbit, x9, Common I/O, 300MHz, RoHS, wBGA Non-Stocked
Min.: 104
Mult.: 104

RLDRAM2 576 Mbit 9 bit 300 MHz WBGA-144 64 M x 9 1.7 V 2.63 V 0 C + 95 C IS49NLC96400A Bulk
ISSI DRAM RLDRAM2 Memory, 576Mbit, x18, Separate I/O, 533MHz, tRC=15ns, RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 104
Mult.: 104

RLDRAM2 576 Mbit 18 bit 533 MHz WBGA-144 32 M x 18 1.7 V 2.63 V 0 C + 95 C IS49NLS18320A
ISSI DRAM RLDRAM2 Memory, 576Mbit, x18, Separate I/O, 400MHz, tRC=20ns, RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 104
Mult.: 104

RLDRAM2 576 Mbit 18 bit 400 MHz FBGA-144 32 M x 18 1.7 V 2.63 V 0 C + 95 C IS49NLS18320A Bulk
ISSI DRAM RLDRAM2 Memory, 576Mbit, x18, Separate I/O, 300MHz, RoHS, wBGA Non-Stocked
Min.: 104
Mult.: 104

RLDRAM2 576 Mbit 18 bit 300 MHz WBGA-144 32 M x 18 20 ns 1.7 V 2.63 V 0 C + 95 C IS49NLS18320A Bulk
ISSI DRAM RLDRAM2 Memory, 288Mbit, x9, Separate I/O, 400MHz, RoHS, Ind. Temp, wBGA Non-Stocked
Min.: 104
Mult.: 104

RLDRAM2 288 Mbit 9 bit 400 MHz WBGA-144 32 M x 9 1.7 V 2.63 V - 40 C + 85 C IS49NLS93200 Bulk
ISSI DRAM RLDRAM2 Memory, 288Mbit, x9, Separate I/O, 300MHz, RoHS, Ind. Temp, wBGA Non-Stocked
Min.: 104
Mult.: 104

RLDRAM2 288 Mbit 9 bit 300 MHz FBGA-144 32 M x 9 1.7 V 2.63 V - 40 C + 85 C IS49NLS93200 Bulk
ISSI DRAM RLDRAM2 Memory, 576Mbit, x9, Separate I/O, 400MHz, tRC=20ns, RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 104
Mult.: 104

RLDRAM2 576 Mbit 9 bit 400 MHz WBGA-144 64 M x 9 1.7 V 2.63 V 0 C + 95 C IS49NLS96400A Bulk
ISSI DRAM RLDRAM2 Memory, 576Mbit, x9, Separate I/O, 300MHz, RoHS, wBGA Non-Stocked
Min.: 104
Mult.: 104

RLDRAM2 576 Mbit 9 bit 300 MHz WBGA-144 64 M x 9 1.7 V 2.63 V 0 C + 95 C IS49NLS96400A Bulk
ISSI DRAM RLDRAM3 Memory, 576Mbit, x18, Common I/O, 933Mhz, tRC=8ns, RoHS, Ind. Temp Non-Stocked
Min.: 119
Mult.: 119

SDRAM - DDR 576 Mbit 18 bit 933 MHz BGA-168 32 M x 18 8 ns 1.28 V 1.42 V - 40 C + 95 C IS49RL18320 Tray
ISSI DRAM RLDRAM3 Memory, 576Mbit, x18, Common I/O, 800Mhz, tRC=8ns, RoHS, Ind. Temp Non-Stocked
Min.: 119
Mult.: 119

SDRAM - DDR 576 Mbit 18 bit 800 MHz BGA-168 32 M x 18 8 ns 1.28 V 1.42 V - 40 C + 95 C IS49RL18320 Tray
ISSI DRAM RLDRAM3 Memory, 576Mbit, x36, Common I/O, 1066Mhz, tRC=8ns, RoHS, Ind. Temp Non-Stocked
Min.: 119
Mult.: 119

RLDRAM3 576 Mbit 36 bit 1.075 GHz BGA-168 16 M x 36 8 ns 1.28 V 1.42 V - 40 C + 95 C IS49RL36160 Tray
ISSI DRAM RLDRAM3 Memory, 576Mbit, x36, Common I/O, 800Mhz, tRC=8ns, RoHS, Ind. Temp Non-Stocked
Min.: 119
Mult.: 119

SDRAM - DDR 576 Mbit 36 bit 800 MHz BGA-168 16 M x 36 8 ns 1.28 V 1.42 V - 40 C + 95 C IS49RL36160 Tray
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 8Mx16, 143Mhz, Cu 54 pin TSOP II (400 mil) RoHS, T&R Non-Stocked
Min.: 1.500
Mult.: 1.500
: 1.500

SDRAM 128 Mbit 16 bit 143 MHz TSOP-II-54 8 M x 16 5.5 ns 3 V 3.6 V - 40 C + 85 C IS45S16800F Reel
ISSI DRAM Automotive (Tc: -40 to +125C), 1G, 1.5V, DDR3 w/ ECC, 64Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS Non-Stocked Lead-Time 28 Weeks
Min.: 1.500
Mult.: 1.500
: 1.500

SDRAM - DDR3 1 Gbit 16 bit 800 MHz FBGA-96 64 M x 16 1.425 V 1.575 V - 40 C + 125 C IS46TR16640ED Reel
ISSI DRAM Automotive (Tc: -40 to +95C), 512M, 1.8V, DDR2, 32Mx16, 400Mhz @ CL5, 84 ball BGA (8mmx12.5mm) RoHS, T&R Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM - DDR2 512 Mbit 16 bit 400 MHz BGA-84 32 M x 16 1.7 V 1.9 V - 40 C + 95 C IS46DR16320C Reel
ISSI DRAM Automotive (Tc: -40 to +105C), 512M, 1.8V, DDR2, 32Mx16, 333Mhz @ CL5, 84 ball BGA (8mmx12.5mm) RoHS, T&R Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SDRAM - DDR2 512 Mbit 16 bit 333 MHz BGA-84 32 M x 16 450 ps 1.7 V 1.9 V - 40 C + 105 C IS46DR16320C Reel
ISSI DRAM Automotive (Tc: -40 to +95C), 512M, 1.8V, DDR2, 32Mx16, 400Mhz @ CL5, 84 ball BGA (8mmx12.5mm) RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 209
Mult.: 209

SDRAM - DDR2 512 Mbit 16 bit 400 MHz BGA-84 32 M x 16 1.7 V 1.9 V - 40 C + 95 C IS46DR16320C Tray
ISSI DRAM Automotive (Tc: -40 to +95C),1G, 1.8V, DDR2, 128Mx8, 400Mhz at CL5, 60 ball BGA, (8mmx10.5mm), RoHS Non-Stocked Lead-Time 24 Weeks
Min.: 242
Mult.: 242

SDRAM - DDR2 1 Gbit 8 bit 400 MHz BGA-60 128 M x 8 1.7 V 1.9 V - 40 C + 95 C IS46DR81280B
ISSI DRAM Automotive (Tc: -40 to +95C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx16, 1866MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 136
Mult.: 136

SDRAM Mobile - LPDDR4 8 Gbit 16 bit 1.866 GHz BGA-200 512 M x 16 3.5 ns 1.06 V, 1.7 V 1.17 V, 1.95 V - 40 C + 95 C
ISSI DRAM Automotive (Tc: -40 to +105C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx16, 1866MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 136
Mult.: 136

SDRAM Mobile - LPDDR4 8 Gbit 16 bit 1.866 GHz BGA-200 512 M x 16 3.5 ns 1.06 V, 1.7 V 1.17 V, 1.95 V - 40 C + 105 C
ISSI DRAM Automotive (Tc: -40 to +95C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS Non-Stocked Lead-Time 26 Weeks
Min.: 136
Mult.: 136

SDRAM Mobile - LPDDR4 8 Gbit 16 bit 1.6 GHz BGA-200 512 M x 16 3.5 ns 1.06 V, 1.7 V 1.17 V, 1.95 V - 40 C + 95 C