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TM3B0020120A

Name: Coherent TM3B0020120A
Brand: Coherent
SKU: 508-TM3B0020120
Price: 733086 IDR
Availability: InStock

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Mouser No:

508-TM3B0020120

Mfr. No:

TM3B0020120A

Mfr.:

Coherent

Description:

SiC MOSFETs 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101

Datasheet:

TM3B0020120A Datasheet (PDF)

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Learn more about Coherent TM3B0020120A

In Stock: 139

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp733.086	Rp733.086
	Rp636.918	Rp6.369.180
	Rp557.041	Rp66.844.920
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Coherent
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	115 A
Rds On - Drain-Source Resistance:	24.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	172 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	660 W
Channel Mode:	Enhancement
Brand:	Coherent
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	12 ns
Forward Transconductance - Min:	30 S
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	39 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	17 ns

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Datasheet

TM3B0020120A Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TM3x00 1200V SIC MOSFETs

Coherent TM3x00 1200V SIC MOSFETs feature low R_DS(on), superior thermal performance, and industry-leading avalanche capability, ensuring exceptional efficiency and versatility for automotive, industrial, and aerospace systems. The TM3x00 devices are built on Coherent's advanced Gen3+ technology platform and implement fast switching via ultra-low gate resistance. The TM3x00 1200V MOSFETs also provide very low-temperature invariant switching losses in TO247-4L, TSPAK, and TO263-7L package options. These devices are AEC-Q101 qualified at +200°C junction temperature and are proven in AS9100-rated aerospace applications.