Interface IC's MOSFET Modules

Results: 5
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging
Infineon Technologies MOSFET Modules EasyPACK 2C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
Datasheet
12In Stock
Min.: 1
Mult.: 1

SiC Press Fit 1.2 kV 100 A 16.8 mOhms - 10 V, + 25 V 4.3 V - 40 C + 175 C 20 mW EasyPACK C series Tray
Infineon Technologies MOSFET Modules EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
Datasheet
16In Stock
Min.: 1
Mult.: 1

SiC Press Fit 1.2 kV 95 A 16.8 mOhms - 10 V, + 25 V 4.3 V - 40 C + 175 C 20 mW EasyPACK C series Tray
Infineon Technologies MOSFET Modules 62 mm C-Series module with CoolSiC Trench MOSFET and pre-applied thermal interface material
Datasheet
17In Stock
Min.: 1
Mult.: 1

Si 62 mm C-Series Tray
Infineon Technologies MOSFET Modules 62 mm C-Series module with CoolSiC Trench MOSFET and pre-applied thermal interface material
Datasheet
1In Stock
Min.: 1
Mult.: 1

Si 62 mm C-Series Tray
Infineon Technologies MOSFET Modules EasyPACK 1C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 13 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
Datasheet
More Info Available
Min.: 1
Mult.: 1

SiC Press Fit 1.2 kV 60 A 25.2 mOhms - 10 V, + 25 V 4.3 V - 40 C + 175 C 20 mW EasyPACK C series Tray