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FS17MR12W2M1HB11ABPSA2

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See Product Specifications

Mouser No:

726-FS17MR12W2M1HB11

Mfr. No:

FS17MR12W2M1HB11ABPSA2

Mfr.:

Infineon Technologies

Description:

MOSFET Modules EasyPACK 2B module with CoolSiC Trench MOSFET and PressFIT / NTC

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FS17MR12W2M1HB11ABPSA2 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET Modules
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	Press Fit
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	40 A
Vgs - Gate-Source Voltage:	- 10 V, 23 V
Vgs th - Gate-Source Threshold Voltage:	5.15 V
Pd - Power Dissipation:	20 mW
Series:	EasyPACK 2B
Packaging:	Tray
Brand:	Infineon Technologies
Configuration:	Hex
Country of Assembly:	DE
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	12 ns
Height:	1.4 mm
If - Forward Current:	16 A
Length:	56.7 mm
Product:	MOSFET Modules
Product Type:	MOSFET Modules
Rise Time:	29 ns
Factory Pack Quantity:	15
Subcategory:	Discrete and Power Modules
Tradename:	CoolSiC
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	32 ns
Vf - Forward Voltage:	4.2 V
Width:	48 mm
Part # Aliases:	FS17MR12W2M1H_B11_A SP005958141

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Datasheet

FS17MR12W2M1HB11ABPSA2 Datasheet (PDF)

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CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

1200V CoolSiC™ M1H Modules

Infineon Technologies 1200V CoolSiC™ M1H Modules offer EV Charging and other inverter designers opportunities to achieve never-before-seen efficiency and power density levels.

1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.