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|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
Rp36.785,70
-
910In Stock
-
New Product
|
Mouser Part No
511-STL160N6LF7
New Product
|
STMicroelectronics
|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910In Stock
|
|
|
Rp36.785,70
|
|
|
Rp23.472,78
|
|
|
Rp15.905,44
|
|
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Rp12.647,27
|
|
|
Rp12.016,66
|
|
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Rp11.210,88
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFETs N-Channel 40 V StripFET II Pwr Mos
- STP150NF04
- STMicroelectronics
-
1:
Rp43.617,33
-
870In Stock
|
Mouser Part No
511-STP150NF04
|
STMicroelectronics
|
MOSFETs N-Channel 40 V StripFET II Pwr Mos
|
|
870In Stock
|
|
|
Rp43.617,33
|
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|
Rp29.603,73
|
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|
Rp25.399,65
|
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Rp21.370,74
|
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Rp20.845,23
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
Rp1.621.723,86
-
144In Stock
|
Mouser Part No
511-2N2222AUB1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
144In Stock
|
|
|
Rp1.621.723,86
|
|
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Rp1.523.103,15
|
|
|
Rp1.320.256,29
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
Rp1.955.597,88
-
21In Stock
|
Mouser Part No
511-2N2907AUB1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21In Stock
|
|
|
Rp1.955.597,88
|
|
|
Rp1.651.327,59
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
Rp4.103.006,91
-
27In Stock
|
Mouser Part No
511-2N5154S1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
27In Stock
|
|
|
Rp4.103.006,91
|
|
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Rp3.457.855,80
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
Rp116.663,22
-
557In Stock
|
Mouser Part No
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
557In Stock
|
|
|
Rp116.663,22
|
|
|
Rp57.981,27
|
|
|
Rp57.806,10
|
|
|
Rp57.455,76
|
|
|
Rp55.003,38
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
Rp360.149,52
-
109In Stock
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
109In Stock
|
|
|
Rp360.149,52
|
|
|
Rp258.550,92
|
|
|
Rp251.193,78
|
|
|
Rp234.377,46
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
Rp271.163,16
-
169In Stock
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
169In Stock
|
|
|
Rp271.163,16
|
|
|
Rp191.460,81
|
|
|
Rp184.278,84
|
|
|
Rp174.469,32
|
|
|
Rp162.908,10
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
Rp312.853,62
-
527In Stock
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
527In Stock
|
|
|
Rp312.853,62
|
|
|
Rp231.749,91
|
|
|
Rp164.659,80
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
Rp331.071,30
-
448In Stock
|
Mouser Part No
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
448In Stock
|
|
|
Rp331.071,30
|
|
|
Rp210.554,34
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
Rp359.974,35
-
533In Stock
|
Mouser Part No
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
533In Stock
|
|
|
Rp359.974,35
|
|
|
Rp226.494,81
|
|
|
Rp205.474,41
|
|
|
Rp194.964,21
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
Rp316.532,19
-
459In Stock
|
Mouser Part No
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
459In Stock
|
|
|
Rp316.532,19
|
|
|
Rp231.574,74
|
|
|
Rp203.372,37
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
Rp297.789,00
-
328In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
328In Stock
|
|
|
Rp297.789,00
|
|
|
Rp284.651,25
|
|
|
Rp129.100,29
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
Rp230.348,55
-
589In Stock
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
589In Stock
|
|
|
Rp230.348,55
|
|
|
Rp160.981,23
|
|
|
Rp131.727,84
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
Rp228.596,85
-
587In Stock
|
Mouser Part No
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
587In Stock
|
|
|
Rp228.596,85
|
|
|
Rp159.755,04
|
|
|
Rp130.326,48
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
Rp189.709,11
-
537In Stock
-
600On Order
|
Mouser Part No
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537In Stock
600On Order
|
|
|
Rp189.709,11
|
|
|
Rp113.510,16
|
|
|
Rp107.904,72
|
|
|
Rp102.824,79
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
Rp219.663,18
-
635In Stock
|
Mouser Part No
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
635In Stock
|
|
|
Rp219.663,18
|
|
|
Rp159.054,36
|
|
|
Rp130.151,31
|
|
|
Rp129.976,14
|
|
|
Rp123.845,19
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
Rp221.414,88
-
287In Stock
|
Mouser Part No
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
287In Stock
|
|
|
Rp221.414,88
|
|
|
Rp185.329,86
|
|
|
Rp139.960,83
|
|
|
Rp125.071,38
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
Rp439.676,70
-
183In Stock
-
200On Order
|
Mouser Part No
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
183In Stock
200On Order
|
|
|
Rp439.676,70
|
|
|
Rp337.902,93
|
|
|
Rp220.714,20
|
|
|
Rp220.714,20
|
|
|
Rp210.204,00
|
|
Min.: 1
Mult.: 1
:
200
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
|
|
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
Rp333.874,02
-
183In Stock
|
Mouser Part No
511-SH68N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
183In Stock
|
|
|
Rp333.874,02
|
|
|
Rp238.581,54
|
|
|
Rp212.831,55
|
|
|
Rp212.831,55
|
|
Min.: 1
Mult.: 1
:
200
|
|
MOSFETs
|
Si
|
|
|
N-Channel
|
|
|
|
IGBT Modules SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
- STGIK10M120T
- STMicroelectronics
-
1:
Rp751.128,96
-
63In Stock
-
44On Order
|
Mouser Part No
511-STGIK10M120T
|
STMicroelectronics
|
IGBT Modules SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
|
|
63In Stock
44On Order
|
|
|
Rp751.128,96
|
|
|
Rp662.317,77
|
|
|
Rp590.848,41
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIPHP-30
|
|
|
|
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
- STGSH80HB65DAG
- STMicroelectronics
-
1:
Rp340.004,97
-
189In Stock
|
Mouser Part No
511-STGSH80HB65DAG
|
STMicroelectronics
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
|
|
189In Stock
|
|
|
Rp340.004,97
|
|
|
Rp243.135,96
|
|
|
Rp217.736,31
|
|
|
Rp217.736,31
|
|
Min.: 1
Mult.: 1
:
200
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
ACEPACK-5
|
|
|
|
|
MOSFETs Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
- STH12N120K5-2AG
- STMicroelectronics
-
1:
Rp210.379,17
-
439In Stock
|
Mouser Part No
511-STH12N120K5-2AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
|
|
439In Stock
|
|
|
Rp210.379,17
|
|
|
Rp170.440,41
|
|
|
Rp142.062,87
|
|
|
Rp129.100,29
|
|
|
Rp118.239,75
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
- STH60N099DM9-2AG
- STMicroelectronics
-
1:
Rp102.124,11
-
1.142In Stock
|
Mouser Part No
511-STH60N099DM9-2AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
|
|
1.142In Stock
|
|
|
Rp102.124,11
|
|
|
Rp68.491,47
|
|
|
Rp49.397,94
|
|
|
Rp48.522,09
|
|
|
Rp45.193,86
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|
|
|
MOSFETs N-Channel Enhancement Mode Standard Level 100V, 4.6mohm max, 125A STripFET F8
- STL120N10F8
- STMicroelectronics
-
1:
Rp45.369,03
-
4.620In Stock
-
3.000On Order
|
Mouser Part No
511-STL120N10F8
|
STMicroelectronics
|
MOSFETs N-Channel Enhancement Mode Standard Level 100V, 4.6mohm max, 125A STripFET F8
|
|
4.620In Stock
3.000On Order
|
|
|
Rp45.369,03
|
|
|
Rp29.253,39
|
|
|
Rp20.144,55
|
|
|
Rp16.115,64
|
|
|
Rp16.080,61
|
|
|
Rp15.029,59
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
|
Indonesia
