|
|
GaN FETs EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2
- EPC2040
- EPC
-
1:
Rp30.654,75
-
4.187In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2040
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2
|
|
4.187In Stock
|
|
|
Rp30.654,75
|
|
|
Rp19.619,04
|
|
|
Rp13.085,20
|
|
|
Rp10.335,03
|
|
|
Rp8.478,23
|
|
|
View
|
|
|
Rp9.441,66
|
|
|
Rp7.654,93
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-6
|
N-Channel
|
1 Channel
|
15 V
|
3.4 A
|
30 mOhms
|
6 V, - 4 V
|
2.5 V
|
745 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95
- EPC2050
- EPC
-
1:
Rp114.736,35
-
2.180In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2050
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95
|
|
2.180In Stock
|
|
|
Rp114.736,35
|
|
|
Rp79.527,18
|
|
|
Rp58.506,78
|
|
|
Rp55.353,72
|
|
|
Rp47.646,24
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-12
|
N-Channel
|
1 Channel
|
350 V
|
6.3 A
|
80 mOhms
|
6 V, - 4 V
|
2.5 V
|
2.9 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,100 V, 25 milliohm at 5 V, BGA 1.3 x 0.85
- EPC2051
- EPC
-
1:
Rp32.581,62
-
4.500In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2051
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,100 V, 25 milliohm at 5 V, BGA 1.3 x 0.85
|
|
4.500In Stock
|
|
|
Rp32.581,62
|
|
|
Rp20.845,23
|
|
|
Rp13.961,05
|
|
|
Rp11.053,23
|
|
|
Rp9.091,32
|
|
|
View
|
|
|
Rp10.194,89
|
|
|
Rp8.320,58
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-6
|
N-Channel
|
1 Channel
|
100 V
|
1.7 A
|
25 mOhms
|
6 V, - 4 V
|
2.5 V
|
1.8 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
- EPC2052
- EPC
-
1:
Rp40.289,10
-
12.193In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2052
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
|
|
12.193In Stock
|
|
|
Rp40.289,10
|
|
|
Rp25.925,16
|
|
|
Rp17.692,17
|
|
|
Rp14.083,67
|
|
|
Rp13.295,40
|
|
|
Rp11.158,33
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-6
|
N-Channel
|
1 Channel
|
100 V
|
8.2 A
|
13.5 mOhms
|
6 V, - 4 V
|
2.5 V
|
3.5 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,200 V, 43 milliohm at 5 V, BGA 1.8 x 1.8
- EPC2054
- EPC
-
1:
Rp43.792,50
-
8.185In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2054
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,200 V, 43 milliohm at 5 V, BGA 1.8 x 1.8
|
|
8.185In Stock
|
|
|
Rp43.792,50
|
|
|
Rp28.202,37
|
|
|
Rp19.268,70
|
|
|
Rp15.449,99
|
|
|
Rp13.312,92
|
|
|
View
|
|
|
Rp14.854,42
|
|
|
Rp13.120,23
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-4
|
N-Channel
|
1 Channel
|
200 V
|
3 A
|
43 mOhms
|
6 V, - 4 V
|
2.5 V
|
2.9 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
- EPC2055
- EPC
-
1:
Rp56.930,25
-
11.051In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2055
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
|
|
11.051In Stock
|
|
|
Rp56.930,25
|
|
|
Rp37.136,04
|
|
|
Rp25.925,16
|
|
|
Rp22.071,42
|
|
|
Rp21.195,57
|
|
|
Rp17.867,34
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
40 V
|
29 A
|
3.5 mOhms
|
6 V, - 4 V
|
2.5 V
|
6.6 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET, 170 V, 9 milliOhm at 5 V, LGA 2.8 x 1.4
- EPC2059
- EPC
-
1:
Rp77.249,97
-
2.468In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2059
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET, 170 V, 9 milliOhm at 5 V, LGA 2.8 x 1.4
|
|
2.468In Stock
|
|
|
Rp77.249,97
|
|
|
Rp51.149,64
|
|
|
Rp36.260,19
|
|
|
Rp33.282,30
|
|
|
Rp31.530,60
|
|
|
Rp27.151,35
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
170 V
|
24 A
|
9 mOhms
|
6 V, - 4 V
|
2.5 V
|
5.7 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95
- EPC2065
- EPC
-
1:
Rp74.972,76
-
2.928In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2065
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95
|
|
2.928In Stock
|
|
|
Rp74.972,76
|
|
|
Rp49.748,28
|
|
|
Rp35.209,17
|
|
|
Rp32.231,28
|
|
|
Rp26.801,01
|
|
|
Rp26.275,50
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
LGA-8
|
N-Channel
|
1 Channel
|
80 V
|
60 A
|
3.6 mOhms
|
6 V, - 4 V
|
2.5 V
|
9.4 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,40 V, 1.5 milliohm at 5 V, LGA 3.25 x 2.85
- EPC2067
- EPC
-
1:
Rp92.314,59
-
1.998In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2067
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,40 V, 1.5 milliohm at 5 V, LGA 3.25 x 2.85
|
|
1.998In Stock
|
|
|
Rp92.314,59
|
|
|
Rp66.914,94
|
|
|
Rp48.171,75
|
|
|
Rp46.945,56
|
|
|
Rp38.187,06
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
LGA-14
|
N-Channel
|
1 Channel
|
40 V
|
69 A
|
1.5 mOhms
|
6 V, - 4 V
|
2.5 V
|
17.1 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85
- EPC2070
- EPC
-
1:
Rp30.654,75
-
4.019In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2070
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85
|
|
4.019In Stock
|
|
|
Rp30.654,75
|
|
|
Rp19.619,04
|
|
|
Rp13.085,20
|
|
|
Rp10.335,03
|
|
|
Rp8.478,23
|
|
|
View
|
|
|
Rp9.441,66
|
|
|
Rp7.654,93
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-6
|
N-Channel
|
1 Channel
|
100 V
|
1.7 A
|
23 mOhms
|
6 V, - 4 V
|
2.5 V
|
1.9 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
- EPC2103
- EPC
-
1:
Rp187.607,07
-
980In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2103
New At Mouser
|
EPC
|
GaN FETs EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
|
|
980In Stock
|
|
|
Rp187.607,07
|
|
|
Rp130.326,48
|
|
|
Rp108.605,40
|
|
|
Rp88.636,02
|
|
Min.: 1
Mult.: 1
:
500
|
|
|
SMD/SMT
|
Die
|
N-Channel
|
2-Channel
|
80 V
|
30 A
|
5.5 mOhms
|
6 V, - 4 V
|
2.5 V
|
6.5 nC, 6.5 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
- EPC2106
- EPC
-
1:
Rp46.595,22
-
2.500In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2106
New At Mouser
|
EPC
|
GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
|
|
2.500In Stock
|
|
|
Rp46.595,22
|
|
|
Rp29.954,07
|
|
|
Rp20.670,06
|
|
|
Rp16.623,63
|
|
|
Rp13.855,95
|
|
|
View
|
|
|
Rp16.238,26
|
|
|
Rp13.575,68
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-9
|
N-Channel
|
2 Channel
|
100 V
|
1.7 A
|
70 mOhms
|
6 V, - 4 V
|
2.5 V
|
730 pC, 730 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
- EPC2207
- EPC
-
1:
Rp55.879,23
-
7.490In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2207
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
|
|
7.490In Stock
|
|
|
Rp55.879,23
|
|
|
Rp36.435,36
|
|
|
Rp25.399,65
|
|
|
Rp21.545,91
|
|
|
Rp21.020,40
|
|
|
Rp17.517,00
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
200 V
|
14 A
|
22 mOhms
|
6 V, - 4 V
|
2.5 V
|
4.5 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
- EPC2214
- EPC
-
1:
Rp43.792,50
-
14.871In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2214
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
|
|
14.871In Stock
|
|
|
Rp43.792,50
|
|
|
Rp28.202,37
|
|
|
Rp19.268,70
|
|
|
Rp15.449,99
|
|
|
Rp12.892,51
|
|
|
View
|
|
|
Rp14.854,42
|
|
|
Rp12.472,10
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-9
|
N-Channel
|
1 Channel
|
80 V
|
10 A
|
20 mOhms
|
6 V, - 4 V
|
2.5 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
- EPC2216
- EPC
-
1:
Rp35.034,00
-
4.950In Stock
-
New At Mouser
|
Mouser Part No
65-EPC2216
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
|
|
4.950In Stock
|
|
|
Rp35.034,00
|
|
|
Rp22.421,76
|
|
|
Rp15.099,65
|
|
|
Rp11.999,15
|
|
|
Rp9.546,77
|
|
|
View
|
|
|
Rp11.053,23
|
|
|
Rp9.196,43
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
BGA-6
|
N-Channel
|
1 Channel
|
15 V
|
3.4 A
|
26 mOhms
|
6 V, - 4 V
|
2.5 V
|
0.87 nC
|
- 55 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,40 V, 110 milliohm at 5 V, LGA 2.05 x 0.85
- EPC8004
- EPC
-
1:
Rp75.147,93
-
1.942In Stock
-
New At Mouser
|
Mouser Part No
65-EPC8004
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,40 V, 110 milliohm at 5 V, LGA 2.05 x 0.85
|
|
1.942In Stock
|
|
|
Rp75.147,93
|
|
|
Rp49.573,11
|
|
|
Rp35.034,00
|
|
|
Rp32.056,11
|
|
|
Rp30.304,41
|
|
|
Rp25.925,16
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
40 V
|
4 A
|
110 mOhms
|
6 V, - 4 V
|
2.5 V
|
370 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,65 V, 130 milliohm at 5 V, LGA 2.05 x 0.85
- EPC8009
- EPC
-
1:
Rp80.578,20
-
2.460In Stock
-
New At Mouser
|
Mouser Part No
65-EPC8009
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,65 V, 130 milliohm at 5 V, LGA 2.05 x 0.85
|
|
2.460In Stock
|
|
|
Rp80.578,20
|
|
|
Rp53.426,85
|
|
|
Rp37.836,72
|
|
|
Rp35.209,17
|
|
|
Rp33.282,30
|
|
|
Rp28.552,71
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
65 V
|
4 A
|
130 mOhms
|
6 V, - 4 V
|
2.5 V
|
370 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,100 V, 160 milliohm at 5 V, LGA 2.05 x 0.85
- EPC8010
- EPC
-
1:
Rp53.952,36
-
3.858In Stock
-
New At Mouser
|
Mouser Part No
65-EPC8010
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,100 V, 160 milliohm at 5 V, LGA 2.05 x 0.85
|
|
3.858In Stock
|
|
|
Rp53.952,36
|
|
|
Rp35.034,00
|
|
|
Rp24.348,63
|
|
|
Rp20.494,89
|
|
|
Rp19.619,04
|
|
|
Rp16.641,15
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
100 V
|
4 A
|
160 mOhms
|
6 V, - 4 V
|
2.5 V
|
360 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
- EPC2203
- EPC
-
1:
Rp25.749,99
-
334In Stock
-
New At Mouser
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Mouser Part No
65-EPC2203
New At Mouser
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EPC
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GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
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334In Stock
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Rp25.749,99
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Rp16.290,81
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Rp10.825,51
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Rp8.495,75
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Rp6.901,70
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View
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Rp7.742,51
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Rp6.148,47
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Rp6.008,33
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Min.: 1
Mult.: 1
:
2.500
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SMD/SMT
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BGA-4
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N-Channel
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1 Channel
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80 V
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1.7 A
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80 mOhms
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- 4 V, 5.75 V
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2.5 V
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670 pC
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- 55 C
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+ 150 C
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Enhancement
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eGaN FET
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GaN FETs EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9
- EPC2012C
- EPC
-
1:
Rp64.988,07
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New At Mouser
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Mouser Part No
65-EPC2012C
New At Mouser
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EPC
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GaN FETs EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9
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Rp64.988,07
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Rp42.741,48
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Rp29.954,07
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Rp26.275,50
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Rp25.224,48
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Rp21.370,74
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Min.: 1
Mult.: 1
:
2.500
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SMD/SMT
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LGA-4
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N-Channel
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1 Channel
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200 V
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5 A
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100 mOhms
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6 V, - 4 V
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2.5 V
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1 nC
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- 40 C
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+ 150 C
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Enhancement
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eGaN FET
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GaN FETs EPC eGaN FET,100 V, 3.2 milliohm at 5 V, LGA 3.5 x 2.0
- EPC2088
- EPC
-
1:
Rp91.438,74
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-
New At Mouser
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Mouser Part No
65-EPC2088
New At Mouser
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EPC
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GaN FETs EPC eGaN FET,100 V, 3.2 milliohm at 5 V, LGA 3.5 x 2.0
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Rp91.438,74
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Rp60.783,99
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Rp43.442,16
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Rp41.690,46
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Rp33.807,81
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Min.: 1
Mult.: 1
:
1.000
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SMD/SMT
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LGA-8
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N-Channel
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1 Channel
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100 V
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60 A
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3.2 mOhms
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6 V, - 4 V
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2.5 V
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12.5 nC
|
- 40 C
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+ 150 C
|
Enhancement
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eGaN FET
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GaN FETs EPC eGaN FET,60 V, 2.6 milliohm at 5 V, BGA 4.6 x 2.6
- EPC2031
- EPC
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2.500:
Rp63.937,05
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Non-Stocked Lead-Time 18 Weeks
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Mouser Part No
65-EPC2031
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EPC
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GaN FETs EPC eGaN FET,60 V, 2.6 milliohm at 5 V, BGA 4.6 x 2.6
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Non-Stocked Lead-Time 18 Weeks
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Min.: 2.500
Mult.: 500
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500
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SMD/SMT
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BGA-24
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N-Channel
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1
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60 V
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48 A
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2.6 mOhms
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6 V, - 4 V
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2.5 V
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16 nC
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- 40 C
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+ 150
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Enhancement
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eGaN FET
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GaN FETs EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
- EPC2044
- EPC
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12.500:
Rp12.261,90
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Non-Stocked Lead-Time 18 Weeks
|
Mouser Part No
65-EPC2044
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EPC
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GaN FETs EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
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Non-Stocked Lead-Time 18 Weeks
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Min.: 12.500
Mult.: 2.500
:
2.500
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SMD/SMT
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Die
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N-Channel
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1
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100 V
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9.4 A
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10.5 mOhms
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6 V, - 4 V
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2.5 V
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4.3 nC
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- 40 C
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+ 150
|
Enhancement
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eGaN FET
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GaN FETs EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
- EPC2069
- EPC
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5.000:
Rp26.275,50
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Non-Stocked Lead-Time 18 Weeks
|
Mouser Part No
65-EPC2069
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EPC
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GaN FETs EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
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Non-Stocked Lead-Time 18 Weeks
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Min.: 5.000
Mult.: 1.000
:
1.000
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SMD/SMT
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LGA-16
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N-Channel
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1
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40 V
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80 A
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2.25 mOhms
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6 V, - 4 V
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2.5 V
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12.5 nC
|
- 40 C
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+ 150
|
Enhancement
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eGaN FET
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GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP
- EPC2092
- EPC
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5.000:
Rp40.464,27
-
Non-Stocked Lead-Time 18 Weeks
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New Product
|
Mouser Part No
65-EPC2092
New Product
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EPC
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GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP
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Non-Stocked Lead-Time 18 Weeks
|
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Min.: 5.000
Mult.: 1.000
:
1.000
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SMD/SMT
|
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N - Channel
|
1 Channel
|
100 V
|
69 A
|
3.2 mOhms
|
6 V, - 4 V
|
2.5 V
|
12 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
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