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|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
Rp167.463
-
37In Stock
-
New Product
|
Mouser Part No
511-SCT040TO65G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37In Stock
|
|
|
Rp167.463
|
|
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Rp126.473
|
|
|
Rp93.891
|
|
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Rp87.585
|
|
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Rp87.585
|
|
Min.: 1
Mult.: 1
:
1.800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
Rp42.216
-
1.003In Stock
-
1.000On Order
-
New Product
|
Mouser Part No
511-STF80N1K1K6
New Product
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1.003In Stock
1.000On Order
|
|
|
Rp42.216
|
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Rp20.670
|
|
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Rp18.393
|
|
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Rp14.784
|
|
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Rp13.558
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
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MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
Rp56.230
-
1.043In Stock
-
New Product
|
Mouser Part No
511-STF80N600K6
New Product
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1.043In Stock
|
|
|
Rp56.230
|
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Rp28.202
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Rp27.677
|
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Rp23.122
|
|
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Rp20.320
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
Rp77.600
-
540In Stock
-
600On Order
-
New Product
|
Mouser Part No
511-STGHU30M65DF2AG
New Product
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540In Stock
600On Order
|
|
|
Rp77.600
|
|
|
Rp51.500
|
|
|
Rp36.435
|
|
|
Rp31.355
|
|
Min.: 1
Mult.: 1
:
600
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
Rp73.396
-
766In Stock
-
New Product
|
Mouser Part No
511-STGWA30M65DF2AG
New Product
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766In Stock
|
|
|
Rp73.396
|
|
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Rp49.398
|
|
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Rp36.611
|
|
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Rp32.582
|
|
|
Rp28.903
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
Rp84.607
-
496In Stock
-
New Product
|
Mouser Part No
511-STK615N4F8AG
New Product
|
STMicroelectronics
|
MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496In Stock
|
|
|
Rp84.607
|
|
|
Rp56.230
|
|
|
Rp39.939
|
|
|
Rp37.662
|
|
|
Rp35.560
|
|
|
Rp35.034
|
|
Min.: 1
Mult.: 1
:
2.000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
Rp36.786
-
910In Stock
-
New Product
|
Mouser Part No
511-STL160N6LF7
New Product
|
STMicroelectronics
|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910In Stock
|
|
|
Rp36.786
|
|
|
Rp23.473
|
|
|
Rp15.905
|
|
|
Rp12.647
|
|
|
Rp11.789
|
|
|
Rp11.211
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFETs N-Ch 950V 1 Ohm 9A Zener 5 Power
- STI6N95K5
- STMicroelectronics
-
1:
Rp44.493
-
722In Stock
-
Verify Status with Factory
|
Mouser Part No
511-STI6N95K5
Verify Status with Factory
|
STMicroelectronics
|
MOSFETs N-Ch 950V 1 Ohm 9A Zener 5 Power
|
|
722In Stock
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA75N60DM6
- STMicroelectronics
-
1:
Rp179.900
-
185In Stock
|
Mouser Part No
511-STWA75N60DM6
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
185In Stock
|
|
|
Rp179.900
|
|
|
Rp125.947
|
|
|
Rp97.570
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
- STF25N60M2-EP
- STMicroelectronics
-
1:
Rp58.857
-
841In Stock
|
Mouser Part No
511-STF25N60M2-EP
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
|
|
841In Stock
|
|
|
Rp58.857
|
|
|
Rp32.056
|
|
|
Rp29.078
|
|
|
Rp23.648
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFETs N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
- STF4N62K3
- STMicroelectronics
-
1:
Rp51.675
-
963In Stock
|
Mouser Part No
511-STF4N62K3
|
STMicroelectronics
|
MOSFETs N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
|
|
963In Stock
|
|
|
Rp51.675
|
|
|
Rp19.094
|
|
|
Rp18.393
|
|
|
Rp17.867
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBTs 30A 600V Fast IGBT 5kHz 1.9 VCE
- STGWF30NC60S
- STMicroelectronics
-
1:
Rp88.461
-
457In Stock
|
Mouser Part No
511-STGWF30NC60S
|
STMicroelectronics
|
IGBTs 30A 600V Fast IGBT 5kHz 1.9 VCE
|
|
457In Stock
|
|
|
Rp88.461
|
|
|
Rp58.682
|
|
|
Rp36.611
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3PF
|
|
|
|
|
MOSFETs N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
- STU3N65M6
- STMicroelectronics
-
1:
Rp32.406
-
2.440In Stock
-
NRND
|
Mouser Part No
511-STU3N65M6
NRND
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
|
|
2.440In Stock
|
|
|
Rp32.406
|
|
|
Rp20.670
|
|
|
Rp13.681
|
|
|
Rp11.211
|
|
|
View
|
|
|
Rp9.810
|
|
|
Rp9.021
|
|
|
Rp9.004
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
Rp1.621.724
-
144In Stock
|
Mouser Part No
511-2N2222AUB1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
144In Stock
|
|
|
Rp1.621.724
|
|
|
Rp1.523.103
|
|
|
Rp1.320.256
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
Rp1.955.598
-
21In Stock
|
Mouser Part No
511-2N2907AUB1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21In Stock
|
|
|
Rp1.955.598
|
|
|
Rp1.651.328
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
Rp4.103.007
-
27In Stock
|
Mouser Part No
511-2N5154S1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
27In Stock
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
Rp116.663
-
557In Stock
|
Mouser Part No
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
557In Stock
|
|
|
Rp116.663
|
|
|
Rp57.981
|
|
|
Rp57.806
|
|
|
Rp57.456
|
|
|
Rp55.003
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
Rp359.974
-
127In Stock
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
127In Stock
|
|
|
Rp359.974
|
|
|
Rp258.551
|
|
|
Rp251.194
|
|
|
Rp234.553
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
Rp271.163
-
169In Stock
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
169In Stock
|
|
|
Rp271.163
|
|
|
Rp191.461
|
|
|
Rp184.279
|
|
|
Rp174.469
|
|
|
Rp162.908
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
Rp273.616
-
527In Stock
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
527In Stock
|
|
|
Rp273.616
|
|
|
Rp193.213
|
|
|
Rp164.660
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
Rp331.071
-
478In Stock
|
Mouser Part No
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
478In Stock
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
Rp355.245
-
590In Stock
|
Mouser Part No
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
590In Stock
|
|
|
Rp355.245
|
|
|
Rp226.495
|
|
|
Rp205.474
|
|
|
Rp194.964
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
Rp316.532
-
462In Stock
|
Mouser Part No
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
462In Stock
|
|
|
Rp316.532
|
|
|
Rp231.575
|
|
|
Rp203.372
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
Rp285.177
-
338In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338In Stock
|
|
|
Rp285.177
|
|
|
Rp129.100
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
Rp230.349
-
598In Stock
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
598In Stock
|
|
|
Rp230.349
|
|
|
Rp160.981
|
|
|
Rp131.728
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
Indonesia
