4402 Transistors

Results: 20
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 Mfr.
Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS Product Type
Technology
Mounting Style
Package/Case
Transistor Polarity
Vishay / Siliconix MOSFETs N-Channel 100 V (D-S) MOSFET SO-8, 9.3 mohm a. 10V, 10.3 mohm a. 4.5V
Datasheet

MOSFETs Si SMD/SMT PowerPAK 1212-8S N-Channel
Vishay / Siliconix MOSFETs N-CHANNEL 40-V (D-S) MOSFET
Datasheet

MOSFETs Si SMD/SMT PowerPAK-1212-8S N-Channel
Vishay Semiconductors SISD4402DN-T1-UE3
Vishay Semiconductors MOSFETs N-CHANNEL 40-V (D-S) MOSFET
MOSFETs
Panjit MOSFETs 30V N-Channel Enhancement Mode MOSFET
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

MOSFETs Si
MACOM GTRB204402FC/1-V1-R2
MACOM GaN FETs 400W, 48V, 1930-2020 MHz GaN-SiC HEMT
Datasheet

GaN FETs GaN-on-SiC
MACOM GTRB224402FC-V1-R0
MACOM GaN FETs 400W, 48V, 2110-2200 MHz GaN-SiC HEMT
Datasheet

GaN FETs GaN-on-SiC
MACOM GTRB184402FC-V1-R0
MACOM GaN FETs 480W, 48V, 1805-1880 MHz GaN-SiC HEMT
Datasheet
GaN FETs GaN-on-SiC
Panjit MOSFETs 30V N-Channel Enhancement Mode MOSFET
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

MOSFETs Si
MACOM GTRB184402FC-V1-R2
MACOM GaN FETs 480W, 48V, 1805-1880 MHz GaN-SiC HEMT
Datasheet
GaN FETs GaN-on-SiC
MACOM GTRB224402FC-V1-R2
MACOM GaN FETs 400W, 48V, 2110-2200 MHz GaN-SiC HEMT
Datasheet

GaN FETs GaN-on-SiC
MACOM GTRB204402FC/1-V1-R0
MACOM GaN FETs 400W, 48V, 1930-2020 MHz GaN-SiC HEMT
Datasheet

GaN FETs GaN-on-SiC
Nexperia MOSFETs PSMN8R5-60YS/SOT669/LFPAK
Datasheet
2.427In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 1.500

MOSFETs Si SMD/SMT SOT-669-5 N-Channel
Infineon Technologies RF Bipolar Transistors RF BIP TRANSISTOR
Datasheet
105.627In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3.000

RF Bipolar Transistors Si SMD/SMT SOT-323 NPN
Central Semiconductor Bipolar Transistors - BJT PNP 40Vcbo 40Vceo 5.0Vebo 600mA 625mW
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 2.500
Mult.: 2.500

BJTs - Bipolar Transistors Through Hole TO-92-3 PNP
Central Semiconductor Bipolar Transistors - BJT PNP 40Vcbo 40Vceo 5.0Vebo 600mA 625mW
Datasheet
Non-Stocked Lead-Time 42 Weeks
Min.: 2.500
Mult.: 2.500

BJTs - Bipolar Transistors Si Through Hole TO-92-3 PNP
Central Semiconductor 2N4402 TRE TIN/LEAD
Central Semiconductor Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch Non-Stocked Lead-Time 42 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

BJTs - Bipolar Transistors PNP
Central Semiconductor 2N4402 APM PBFREE
Central Semiconductor Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch Non-Stocked Lead-Time 14 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

BJTs - Bipolar Transistors PNP
Central Semiconductor 2N4402 APM TIN/LEAD
Central Semiconductor Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch Non-Stocked Lead-Time 42 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

BJTs - Bipolar Transistors PNP
Central Semiconductor 2N4402 TRE PBFREE
Central Semiconductor Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch Non-Stocked Lead-Time 14 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

BJTs - Bipolar Transistors PNP
Infineon Technologies MOSFETs MOSFET_)40V 60V)
Datasheet
5.000On Order
MouseReel Available
Min.: 1
Mult.: 1
: 5.000

MOSFETs Si SMD/SMT TSDSON-8-32 N-Channel