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IGW25N120H3FKSA1

Name: Infineon IGW25N120H3FKSA1
Brand: Infineon Technologies
SKU: 726-IGW25N120H3FKSA1
Price: 87585 IDR
Availability: InStock

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Mouser No:

726-IGW25N120H3FKSA1

Mfr. No:

IGW25N120H3FKSA1

Mfr.:

Infineon Technologies

Datasheet:

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Tube

Availability:

In Stock

Price:

Rp88.636

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.05 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	326 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Rectifier Diode Module
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Gate-Emitter Leakage Current:	600 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IGW25N120H3 SP000674424
Unit Weight:	4,430 g