5110 MOSFETs

Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Vishay Semiconductors MOSFETs PWRPK 100V 55A 2.950In Stock
Min.: 1
Mult.: 1

Vishay / Siliconix MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 12.6 m a. 10V 12.5 m a. 7.5V 2.597In Stock
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT PowerPAK-8 N-Channel 1 Channel 100 V 46.3 A 12.6 mOhms - 20 V, 20 V 4 V 12.8 nC - 55 C + 150 C 56.8 W Enhancement Reel, Cut Tape
onsemi MOSFETs SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH 100.050In Stock
Min.: 1
Mult.: 1
Max.: 12.000
: 4.000

Si SMD/SMT SOT-563-6 N-Channel 2 Channel 60 V 294 mA 1.6 Ohms - 20 V, 20 V 1 V 700 pC - 55 C + 150 C 250 mW Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 12.5 m a. 10V 12.3 m a. 7.5V 5.683In Stock
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT SO-8 N-Channel 1 Channel 100 V 47.6 A 12.5 mOhms - 20 V, 20 V 4 V 12.8 nC - 55 C + 150 C 59.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >100-150V 858In Stock
Min.: 1
Mult.: 1
: 4.800

Si SMD/SMT WG-WDSON-5 N-Channel 1 Channel 150 V 60 A 11.3 mOhms - 20 V, 20 V 3.8 V 33 nC - 40 C + 150 C 78 W Enhancement OptiMOS DirectFET Reel, Cut Tape
Infineon Technologies IRF100DM116XTMA1
Infineon Technologies MOSFETs TRENCH >=100V Non-Stocked
Min.: 4.800
Mult.: 4.800
: 4.800

Si Reel