onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules
onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules are 1200V, 80mΩ 3-phase bridge power modules housed in a Dual Inline Package (DIP). These SiC modules are compactly designed to have low total module resistance. The NVXK2VR80WxT2 power modules are automotive-qualified per AEC-Q101 and AQG324. These power modules are lead-free and ROHS, UL94V-0 compliant. The NVXK2VR80WxT2 SiC modules' temperature sensing and the lowest thermal resistance make them ideal for PFC onboard chargers in xEV applications.
Features
- DIP Silicon Carbide (SiC) 3-phase bridge power module
- 1200V drain to source voltage (VDSS)
- 20A continuous drain current (ID) - (NVXK2VR80WDT2)
- 31A continuous drain current (ID) - (NVXK2VR80WXT2)
- 80mΩ (typical) drain to source on-resistance (RDS(ON))
- -55°C to 175°C operating Junction temperature (TJ) range
- Creepage and clearance per IEC60664−1 and IEC 60950−1
- Compact design for low total module resistance
- Module serialization for full traceability
- Lead-free
- RoHS and UL94V-0 compliant
- Automotive qualified per AEC-Q101 and AQG324
Applications
- PFC for on-board charger in xEV applications
- 11kW to 22kW on-board charger for EV-PHEV
SiC MOSFET 3-Phase Bridge Module
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Published: 2024-08-06
| Updated: 2024-08-28