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MOSFETs 80-V N channel NexF ET power MOSFET si A A 595-CSD19506KTTT
- CSD19506KTT
- Texas Instruments
-
1:
Rp89.161,53
-
1.768In Stock
|
Mouser Part No
595-CSD19506KTT
|
Texas Instruments
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MOSFETs 80-V N channel NexF ET power MOSFET si A A 595-CSD19506KTTT
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1.768In Stock
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Rp89.161,53
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Rp65.338,41
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Rp51.675,15
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Rp43.091,82
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Rp41.515,29
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Min.: 1
Mult.: 1
:
500
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MOSFETs
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Si
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SMD/SMT
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D2PAK-3 (TO-263-3)
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N-Channel
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MOSFETs 80-V N channel NexF ET power MOSFET si A A 595-CSD19506KTT
- CSD19506KTTT
- Texas Instruments
-
1:
Rp129.275,46
-
927In Stock
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Mouser Part No
595-CSD19506KTTT
|
Texas Instruments
|
MOSFETs 80-V N channel NexF ET power MOSFET si A A 595-CSD19506KTT
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927In Stock
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Rp129.275,46
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Rp65.513,58
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Rp65.513,58
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Rp61.659,84
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Min.: 1
Mult.: 1
:
50
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MOSFETs
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Si
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SMD/SMT
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D2PAK-3 (TO-263-3)
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N-Channel
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|
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Darlington Transistors Power BJT
Microchip Technology 2N6297
- 2N6297
- Microchip Technology
-
1:
Rp502.387,56
-
53In Stock
|
Mouser Part No
494-2N6297
|
Microchip Technology
|
Darlington Transistors Power BJT
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53In Stock
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Rp502.387,56
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Rp466.652,88
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View
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Quote
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Min.: 1
Mult.: 1
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No
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Darlington Transistors
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MOSFETs 80V N-CH Power MOSFE T
- CSD19506KCS
- Texas Instruments
-
1:
Rp90.212,55
-
133In Stock
|
Mouser Part No
595-CSD19506KCS
|
Texas Instruments
|
MOSFETs 80V N-CH Power MOSFE T
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133In Stock
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Rp90.212,55
|
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Rp49.397,94
|
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Rp44.843,52
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Min.: 1
Mult.: 1
Max.: 100
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MOSFETs
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Si
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Through Hole
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TO-220-3
|
N-Channel
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|
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MOSFETs N-Ch 200V 660mA SOT-223-3
- BSP297H6327XTSA1
- Infineon Technologies
-
1:
Rp21.896,25
-
|
Mouser Part No
726-BSP297H6327XTSA1
|
Infineon Technologies
|
MOSFETs N-Ch 200V 660mA SOT-223-3
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Rp21.896,25
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Rp13.698,29
|
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Rp9.021,26
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Rp7.024,32
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Rp6.236,05
|
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View
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Rp5.412,75
|
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Rp5.307,65
|
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Rp5.255,10
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Min.: 1
Mult.: 1
:
1.000
|
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MOSFETs
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Si
|
SMD/SMT
|
SOT-223-4
|
N-Channel
|
|
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|
Bipolar Transistors - BJT 4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
- 2N6297 PBFREE
- Central Semiconductor
-
1:
Rp323.889,33
-
1In Stock
|
Mouser Part No
610-2N6297
|
Central Semiconductor
|
Bipolar Transistors - BJT 4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
|
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1In Stock
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Rp323.889,33
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Rp205.824,75
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Rp205.299,24
|
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Rp205.124,07
|
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View
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|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
|
Through Hole
|
|
PNP
|
|
|
|
MOSFETs N-Ch 200V 660mA SOT-223-3
- BSP297 H6327
- Infineon Technologies
-
1:
Rp21.370,74
-
|
Mouser Part No
726-BSP297H6327
|
Infineon Technologies
|
MOSFETs N-Ch 200V 660mA SOT-223-3
|
|
|
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Rp21.370,74
|
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Rp13.330,44
|
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Rp8.776,02
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Rp7.094,39
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Rp6.025,85
|
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View
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Rp5.640,47
|
|
|
Rp5.237,58
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOT-223-4
|
N-Channel
|
|
|
|
IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package
- IKY75N120CH7XKSA1
- Infineon Technologies
-
1:
Rp175.695,51
-
198In Stock
|
Mouser Part No
726-IKY75N120CH7XKSA
|
Infineon Technologies
|
IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package
|
|
198In Stock
|
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|
Rp175.695,51
|
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|
Rp124.020,36
|
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|
Rp103.350,30
|
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|
Rp91.964,25
|
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|
Rp86.008,47
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
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GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB
- TGF2979-SM
- Qorvo
-
1:
Rp1.728.052,05
-
Non-Stocked Lead-Time 20 Weeks
|
Mouser Part No
772-TGF2979-SM
|
Qorvo
|
GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB
|
|
Non-Stocked Lead-Time 20 Weeks
|
|
|
Rp1.728.052,05
|
|
|
Rp1.171.011,45
|
|
Min.: 1
Mult.: 1
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
QFN-20
|
N-Channel
|
|
|
|
GaN FETs 8-12GHz 5W GaN PAE 50% Gain 13dB
- TGF2977-SM
- Qorvo
-
1:
Rp753.756,51
-
Lead-Time 24 Weeks
|
Mouser Part No
772-TGF2977-SM
|
Qorvo
|
GaN FETs 8-12GHz 5W GaN PAE 50% Gain 13dB
|
|
Lead-Time 24 Weeks
|
|
|
Rp753.756,51
|
|
|
Rp731.860,26
|
|
|
Rp365.930,13
|
|
Min.: 1
Mult.: 1
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
QFN-16
|
N-Channel
|
|
|
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GaN FETs DC-12 GHz, 20W, 32V GaN RF Tr
- TGF2978-SMTR7
- Qorvo
-
750:
Rp718.722,51
-
Non-Stocked Lead-Time 20 Weeks
|
Mouser Part No
772-TGF2978-SMTR7
|
Qorvo
|
GaN FETs DC-12 GHz, 20W, 32V GaN RF Tr
|
|
Non-Stocked Lead-Time 20 Weeks
|
|
Min.: 750
Mult.: 750
:
750
|
|
GaN FETs
|
GaN
|
|
|
|
|
|
|
Bipolar Transistors - BJT SOT8015 45V .1A NPN GP TRANS
- BC847CQB-QZ
- Nexperia
-
1:
Rp5.255,10
-
3.279In Stock
|
Mouser Part No
771-BC847CQB-QZ
|
Nexperia
|
Bipolar Transistors - BJT SOT8015 45V .1A NPN GP TRANS
|
|
3.279In Stock
|
|
|
Rp5.255,10
|
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|
Rp3.065,48
|
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|
Rp1.874,32
|
|
|
Rp1.348,81
|
|
|
View
|
|
|
Rp1.033,50
|
|
|
Rp1.173,64
|
|
|
Rp1.033,50
|
|
|
Rp1.033,50
|
|
Min.: 1
Mult.: 1
Max.: 3.279
:
5.000
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
DFN-1110D-3
|
NPN
|
|
|
|
Digital Transistors US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
- RN2971(TE85L,F)
- Toshiba
-
1:
Rp6.306,12
-
Non-Stocked
|
Mouser Part No
757-RN2971TE85LF
|
Toshiba
|
Digital Transistors US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
|
|
Non-Stocked
|
|
|
Rp6.306,12
|
|
|
Rp4.011,39
|
|
|
Rp2.487,41
|
|
|
Rp1.681,63
|
|
|
Rp1.278,74
|
|
|
View
|
|
|
Rp1.471,43
|
|
|
Rp1.121,09
|
|
|
Rp928,40
|
|
|
Rp910,88
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
Digital Transistors
|
|
SMD/SMT
|
SM-6
|
PNP
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPA60R099C7XKSA1
- Infineon Technologies
-
1:
Rp116.312,88
-
385In Stock
|
Mouser Part No
726-IPA60R099C7XKSA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
385In Stock
|
|
|
Rp116.312,88
|
|
|
Rp76.198,95
|
|
|
Rp56.054,40
|
|
|
Rp49.923,45
|
|
|
Rp44.318,01
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
Bipolar Transistors - BJT AF TRANS GP BJT PNP 60V 0.6A
- MMBT 2907A LT1
- Infineon Technologies
-
1:
Rp7.882,65
-
40.992In Stock
-
End of Life
|
Mouser Part No
726-MMBT2907ALT1
End of Life
|
Infineon Technologies
|
Bipolar Transistors - BJT AF TRANS GP BJT PNP 60V 0.6A
|
|
40.992In Stock
|
|
|
Rp7.882,65
|
|
|
Rp5.430,27
|
|
|
Rp3.450,85
|
|
|
Rp2.172,11
|
|
|
Rp1.646,60
|
|
|
View
|
|
|
Rp1.926,87
|
|
|
Rp1.401,36
|
|
|
Rp1.243,71
|
|
|
Rp1.121,09
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SOT-23-3
|
PNP
|
|
|
|
Bipolar Transistors - BJT Dual Small-Signal BJT
Microchip Technology 2N2978
- 2N2978
- Microchip Technology
-
100:
Rp507.117,15
-
Non-Stocked Lead-Time 40 Weeks
|
Mouser Part No
579-2N2978
|
Microchip Technology
|
Bipolar Transistors - BJT Dual Small-Signal BJT
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 100
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT Dual Small-Signal BJT
Microchip Technology 2N2976
- 2N2976
- Microchip Technology
-
100:
Rp507.117,15
-
Non-Stocked Lead-Time 40 Weeks
|
Mouser Part No
579-2N2976
|
Microchip Technology
|
Bipolar Transistors - BJT Dual Small-Signal BJT
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 100
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT Dual Small-Signal BJT
Microchip Technology 2N2974
- 2N2974
- Microchip Technology
-
100:
Rp507.117,15
-
Non-Stocked Lead-Time 40 Weeks
|
Mouser Part No
579-2N2974
|
Microchip Technology
|
Bipolar Transistors - BJT Dual Small-Signal BJT
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 100
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT Dual Small-Signal BJT
Microchip Technology 2N2973
- 2N2973
- Microchip Technology
-
100:
Rp507.117,15
-
Non-Stocked Lead-Time 40 Weeks
|
Mouser Part No
579-2N2973
|
Microchip Technology
|
Bipolar Transistors - BJT Dual Small-Signal BJT
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 100
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT Dual Small-Signal BJT
Microchip Technology 2N2979
- 2N2979
- Microchip Technology
-
100:
Rp507.117,15
-
Non-Stocked Lead-Time 40 Weeks
|
Mouser Part No
579-2N2979
|
Microchip Technology
|
Bipolar Transistors - BJT Dual Small-Signal BJT
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 100
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT Dual Small-Signal BJT
Microchip Technology 2N2977
- 2N2977
- Microchip Technology
-
100:
Rp507.117,15
-
Non-Stocked Lead-Time 40 Weeks
|
Mouser Part No
579-2N2977
|
Microchip Technology
|
Bipolar Transistors - BJT Dual Small-Signal BJT
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 100
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT Dual Small-Signal BJT
Microchip Technology 2N2975
- 2N2975
- Microchip Technology
-
100:
Rp507.117,15
-
Non-Stocked Lead-Time 40 Weeks
|
Mouser Part No
579-2N2975
|
Microchip Technology
|
Bipolar Transistors - BJT Dual Small-Signal BJT
|
|
Non-Stocked Lead-Time 40 Weeks
|
|
Min.: 100
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 50W
- 2N6297 TIN/LEAD
- Central Semiconductor
-
60:
Rp240.508,41
-
Non-Stocked Lead-Time 6 Weeks
|
Mouser Part No
610-2N6297-TL
|
Central Semiconductor
|
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 50W
|
|
Non-Stocked Lead-Time 6 Weeks
|
|
Min.: 60
Mult.: 30
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
TO-66-2
|
PNP
|
|
|
|
Bipolar Transistors - BJT SOT8015 45V .5A NPN GP TRANS
- BC817-25QB-QZ
- Nexperia
-
1:
Rp5.955,78
-
35In Stock
|
Mouser Part No
771-BC817-25QB-QZ
|
Nexperia
|
Bipolar Transistors - BJT SOT8015 45V .5A NPN GP TRANS
|
|
35In Stock
|
|
|
Rp5.955,78
|
|
|
Rp3.415,82
|
|
|
Rp3.415,82
|
|
Min.: 1
Mult.: 1
Max.: 35
:
5.000
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
DFN-1110D-3
|
NPN
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPB60R099C7ATMA1
- Infineon Technologies
-
1:
Rp117.013,56
-
1.941In Stock
|
Mouser Part No
726-IPB60R099C7ATMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1.941In Stock
|
|
|
Rp117.013,56
|
|
|
Rp76.724,46
|
|
|
Rp56.404,74
|
|
|
Rp51.675,15
|
|
|
Rp44.493,18
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
Indonesia
