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STD11N60DM2

Name: STMicroelectronics STD11N60DM2
Brand: STMicroelectronics
SKU: 511-STD11N60DM2
Price: 40113.93 IDR
Availability: InStock

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Mouser No:

511-STD11N60DM2

Mfr. No:

STD11N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

Complete Your Design

Datasheet:

STD11N60DM2 Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 1.858

Stock:: 1.858 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000,00)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp40.113,93	Rp40.113,93
	Rp25.749,99	Rp257.499,90
	Rp17.481,97	Rp1.748.197,00
	Rp13.978,57	Rp6.989.285,00
	Rp13.260,37	Rp13.260.370,00
Full Reel (Order in multiples of 2500)
	Rp12.016,66	Rp30.041.650,00

† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	370 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	16.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9.5 ns
Product Type:	MOSFETs
Rise Time:	6.3 ns
Series:	STD11N60DM2
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	11.7 ns
Unit Weight:	330 mg

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Datasheet

STD11N60DM2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.