HyperFET MOSFETs

Results: 116
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs 4 Amps 1000V 2.8 Rds
Datasheet
414In Stock
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 4 A 3 Ohms - 20 V, 20 V 4.5 V 39 nC - 55 C + 150 C 150 W Enhancement HyperFET Tube

IXYS MOSFETs 6 Amps 1200V 2.4 Rds
Datasheet
284In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.6 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 1KV 6A
Datasheet
222In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 6 A 2 Ohms - 20 V, 20 V 4.5 V 88 nC - 55 C + 150 C 180 W Enhancement HyperFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode
Datasheet
29In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 50 A 125 mOhms - 30 V, 30 V 3 V 85 nC - 55 C + 150 C 960 W Enhancement HyperFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 8 A 800 mOhms HyperFET Tube
IXYS MOSFETs DIODE Id48 BVdass500
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 48 A 100 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 800V 34A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 34 A 240 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 3.6 Amps 800V 3.6 Rds
Datasheet
Non-Stocked
Min.: 50
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 3.6 A 3.6 Ohms - 20 V, 20 V - 55 C + 150 C 100 W Enhancement HyperFET Tube
IXYS MOSFETs 72 Amps 550V 0.07 Rds
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 550 V 72 A 72 mOhms - 30 V, 30 V - 55 C + 150 C 890 W Enhancement HyperFET Tube
IXYS MOSFETs 80 Amps 500V 0.06 Rds
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 500 V 80 A 60 mOhms - 30 V, 30 V 5.5 V 250 nC - 55 C + 150 C 960 W Enhancement HyperFET Tube
IXYS MOSFETs 48 Amps 500V 0.1 Rds
Datasheet
Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 48 A 90 mOhms - 20 V, 20 V - 40 C + 150 C 400 W Enhancement HyperFET Tube

IXYS MOSFETs 1KV 10A
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.2 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 11 Amps 800V
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 11 A 950 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 1KV 12A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12 A 1.05 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 12 Amps 1200V 1.3 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 12 A 1.4 Ohms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 900V 12A
Datasheet
Non-Stocked
Min.: 60
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 12 A 1.1 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 13 Amps 1000V 0.9 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12.5 A 900 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 800V 13A
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 800 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 13 Amps 800V 0.8 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 700 mOhms - 20 V, 20 V - 55 C + 150 C 250 W Enhancement HyperFET Tube

IXYS MOSFETs 13 Amps 900V 0.8 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 13 A 800 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 14 Amps 800V 0.7 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 14 A 700 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 15 Amps 600V
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15 A 500 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 800V 15A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 15 A 600 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 600V 20A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 350 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 500V 21A
Datasheet
Non-Stocked
Min.: 90
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 21 A 250 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube