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STMicroelectronics SiC MOSFETs

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Download Table (.CSV)

Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4AG
STMicroelectronics
1: Rp221.414,88
303In Stock

Mfr. Part No.
SCT070W120G3-4AG

Mouser Part No
511-SCT070W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

303In Stock

More Info Available

Rp221.414,88

Rp182.351,97

Rp139.960,83

Rp125.071,38

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

41 nC

- 55 C

+ 200 C

236 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: Rp222.290,73
136In Stock

Mfr. Part No.
SCT040HU65G3AG

Mouser Part No
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Learn More

Datasheet

136In Stock

Cut Tape

Rp222.290,73

Rp155.726,13

Rp135.406,41

Reel

Rp126.472,74

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

H2PAK-2

N-Channel

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055W65G3-4AG
STMicroelectronics
1: Rp244.186,98
47In Stock

Mfr. Part No.
SCT055W65G3-4AG

Mouser Part No
511-SCT055W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

47In Stock

Rp244.186,98

Rp195.840,06

Rp171.141,09

Rp123.670,02

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 18 V, + 18 V

4.2 V

32 nC

- 55 C

+ 200 C

210 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

SCT070H120G3AG
STMicroelectronics
1: Rp213.181,89
85In Stock

Mfr. Part No.
SCT070H120G3AG

Mouser Part No
511-SCT070H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

Learn More

Datasheet

85In Stock

Cut Tape

Rp213.181,89

Rp149.244,84

Rp128.399,61

Reel

Rp119.991,45

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

SCT1000N170
STMicroelectronics
1: Rp155.550,96
567In Stock

Mfr. Part No.
SCT1000N170

Mouser Part No
511-SCT1000N170

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

Learn More

Datasheet

567In Stock

Rp155.550,96

Rp106.503,36

Rp78.826,50

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.7 kV

6 A

1 Ohms

- 10 V, + 25 V

2.1 V

14 nC

- 55 C

+ 200 C

120 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

SCT20N120AG
STMicroelectronics
1: Rp278.520,30
470In Stock

Mfr. Part No.
SCT20N120AG

Mouser Part No
511-SCT20N120AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

Learn More

Datasheet

470In Stock

Rp278.520,30

Rp205.474,41

Rp142.588,38

View

Min.: 1
Mult.: 1

Through Hole

N-Channel

1 Channel

1.2 kV

20 A

239 mOhms

- 20 V, + 20 V

3.5 V

45 nC

- 55 C

+ 200 C

175 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

SCTWA40N12G24AG
STMicroelectronics
1: Rp307.598,52
90In Stock

Mfr. Part No.
SCTWA40N12G24AG

Mouser Part No
511-SCTWA40N12G24AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

Learn More

Datasheet

90In Stock

Rp307.598,52

Rp218.612,16

Rp191.460,81

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

33 A

105 mOhms

- 18 V, + 18 V

5 V

63 nC

- 55 C

+ 200 C

290 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

SCT011HU75G3AG
STMicroelectronics
1: Rp438.100,17
7In Stock
New Product

Mfr. Part No.
SCT011HU75G3AG

Mouser Part No
511-SCT011HU75G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

Learn More

Datasheet

7In Stock

More Info Available

Cut Tape

Rp438.100,17

Rp321.962,46

Rp321.787,29

Reel

Rp300.591,72

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

750 V

110 A

15 mOhms

- 10 V, + 22 V

3.2 V

154 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

SCT070HU120G3AG
STMicroelectronics
1: Rp233.501,61
3In Stock

Mfr. Part No.
SCT070HU120G3AG

Mouser Part No
511-SCT070HU120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

Learn More

Datasheet

3In Stock

More Info Available

Cut Tape

Rp233.501,61

Rp161.156,40

Rp144.865,59

Reel

Rp138.384,30

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

SCTWA90N65G2V-4
STMicroelectronics
1: Rp510.095,04
101In Stock

Mfr. Part No.
SCTWA90N65G2V-4

Mouser Part No
511-SCTWA90N65G2V-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

Learn More

Datasheet

101In Stock

Rp510.095,04

Rp385.549,17

Rp369.083,19

Quote

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

119 A

24 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 200 C

565 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H

SCTW100N65G2AG
STMicroelectronics
1: Rp604.161,33
281In Stock
NRND

Mfr. Part No.
SCTW100N65G2AG

Mouser Part No
511-SCTW100N65G2AG

NRND

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H

Learn More

Datasheet

281In Stock

Rp604.161,33

Rp450.537,24

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

650 V

100 A

69 mOhms

- 10 V, + 22 V

5 V

162 nC

- 55 C

+ 200 C

420 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package

SCTWA70N120G2V-4
STMicroelectronics
1: Rp565.273,59
28In Stock

Mfr. Part No.
SCTWA70N120G2V-4

Mouser Part No
511-SCTWA70N120G2V-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package

Learn More

Datasheet

28In Stock

Rp565.273,59

Rp414.452,22

Min.: 1
Mult.: 1

Through Hole

HIP247-4

N-Channel

1 Channel

1.2 kV

91 A

30 mOhms

- 10 V, + 22 V

2.45 V

150 nC

- 55 C

+ 200 C

547 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3AG
STMicroelectronics
1: Rp300.591,72
New Product

Mfr. Part No.
SCT025H120G3AG

Mouser Part No
511-SCT025H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

More Info Available

Cut Tape

Rp300.591,72

Rp213.357,06

Rp199.168,29

Reel

Rp185.855,37

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: Rp421.809,36

Mfr. Part No.
SCT015W120G3-4AG

Mouser Part No
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

More Info Available

Rp421.809,36

Rp286.578,12

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SCT027HU65G3AG
STMicroelectronics
1: Rp236.829,84
New Product

Mfr. Part No.
SCT027HU65G3AG

Mouser Part No
511-SCT027HU65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Learn More

Datasheet

More Info Available

Cut Tape

Rp236.829,84

Rp176.746,53

Rp152.923,41

Reel

Rp135.231,24

Min.: 1
Mult.: 1

Reel: 600

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

SCT040H120G3AG
STMicroelectronics
1: Rp222.290,73

Mfr. Part No.
SCT040H120G3AG

Mouser Part No
511-SCT040H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Learn More

Datasheet

More Info Available

Cut Tape

Rp222.290,73

Rp155.726,13

Rp135.406,41

Reel

Rp126.472,74

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: Rp220.889,37

Mfr. Part No.
SCT055HU65G3AG

Mouser Part No
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

More Info Available

Cut Tape

Rp220.889,37

Rp154.499,94

Rp134.005,05

Reel

Rp125.071,38

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

4.2 V

29 nC

- 55 C

+ 175 C

185 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an

SCT10N120AG
STMicroelectronics
1: Rp161.156,40

Mfr. Part No.
SCT10N120AG

Mouser Part No
511-SCT10N120AG

STMicroelectronics

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an

Learn More

Datasheet

More Info Available

Rp161.156,40

Rp94.766,97

Rp82.680,24

Min.: 1
Mult.: 1

Through Hole

N-Channel

1 Channel

1.2 kV

12 A

500 mOhms

- 10 V, + 25 V

3.5 V

22 nC

- 55 C

+ 200 C

150 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3-7
STMicroelectronics
1: Rp294.110,43
100On Order
New Product

Mfr. Part No.
SCT025H120G3-7

Mouser Part No
511-SCT025H120G3-7

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

100On Order

Cut Tape

Rp294.110,43

Rp227.545,83

Rp196.891,08

Rp196.715,91

Reel

Rp173.943,81

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

SCT040W120G3-4
STMicroelectronics
1: Rp201.445,50
100On Order
New Product

Mfr. Part No.
SCT040W120G3-4

Mouser Part No
511-SCT040W120G3-4

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Learn More

Datasheet

100On Order

Rp201.445,50

Rp122.268,66

Rp112.634,31

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 10 V, + 22 V

3.1 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

SCTHC250N120G3AG
STMicroelectronics
1: Rp1.321.132,14
New Product

Mfr. Part No.
SCTHC250N120G3AG

Mouser Part No
511-SCTHC250N120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

Datasheet

More Info Available

Rp1.321.132,14

Rp1.067.661,15

Rp1.001.096,55

Min.: 1
Mult.: 1

Through Hole

STPAK-4

N-Channel

1 Channel

1.2 kV

239 A

10.5 nC

- 10 V, + 22 V

4.4 V

304 nC

- 55 C

+ 200 C

994 W

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A

SCT011H75G3AG
STMicroelectronics
1: Rp406.919,91
Non-Stocked Lead-Time 21 Weeks
New Product

Mfr. Part No.
SCT011H75G3AG

Mouser Part No
511-SCT011H75G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A

Datasheet

Non-Stocked Lead-Time 21 Weeks

Cut Tape

Rp406.919,91

Rp352.266,87

Reel

Rp299.365,53

Min.: 1
Mult.: 1

Reel: 1.000

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A

SCT014HU65G3AG
STMicroelectronics
600: Rp250.493,10
Non-Stocked Lead-Time 22 Weeks
New Product

Mfr. Part No.
SCT014HU65G3AG

Mouser Part No
511-SCT014HU65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A

Datasheet

Non-Stocked Lead-Time 22 Weeks

Reel

Rp250.493,10

Min.: 600
Mult.: 600

Reel: 600

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package

SCT014TO65G3
STMicroelectronics
1.800: Rp184.103,67
Non-Stocked Lead-Time 20 Weeks
New Product

Mfr. Part No.
SCT014TO65G3

Mouser Part No
511-SCT014TO65G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package

Datasheet

Non-Stocked Lead-Time 20 Weeks

Reel

Rp184.103,67

View

Min.: 1.800
Mult.: 1.800

Reel: 1.800

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3-7
STMicroelectronics
1.000: Rp154.850,28
Non-Stocked Lead-Time 21 Weeks
New Product

Mfr. Part No.
SCT018H65G3-7

Mouser Part No
511-SCT018H65G3-7

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

Non-Stocked Lead-Time 21 Weeks

Reel

Rp154.850,28

Min.: 1.000
Mult.: 1.000

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

55 A

27 mOhms

-10 V, 22 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

STMicroelectronics SiC MOSFETs

Customer Service Office

Company

Resources

Support

6 A
7 A
12 A
20 A
30 A
33 A
35 A
36 A
40 A
55 A
56 A
60 A
90 A
91 A
100 A
110 A
112 A
119 A
129 A
239 A

10.5 nC
10.5 mOhms
12 mOhms
15 mOhms
15.8 mOhms
18 mOhms
21 mOhms
22 mOhms
24 mOhms
25 mOhms
26 mOhms
27 mOhms
28 mOhms
29 mOhms
30 mOhms
37 mOhms
39.3 mOhms
40 mOhms
54 mOhms
63 mOhms

14 nC
22 nC
29 nC
31 nC
32 nC
36 nC
37 nC
37.5 nC
39.5 nC
41 nC
42.5 nC
45 nC
48.6 nC
51 nC
54 nC
56 nC
61 nC
63 nC
73 nC
76 nC

120 W
150 W
175 W
185 W
210 W
221 W
223 W
234 W
236 W
240 W
266 W
278 W
288 W
290 W
300 W
312 W
313 W
375 W
385 W
388 W